Inventor

HONG CHANG-KI

KR95 patents

⚠️ This page may combine multiple inventors who share the name “HONG CHANG-KI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HONG CHANG-KI

SAMSUNG ELECTRONICS CO LTD

Method for fabricating MOS transistor using selective silicide process

Semiconductor device having multi-gate insulating layers and methods of fabricating the same

Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the same

Chemical mechanical polishing method using double polishing stop layer

Chemical/mechanical polishing slurry and chemical mechanical polishing method using the same

Method of forming a seam-free tungsten plug

Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the same

Methods of fabricating phase change memory elements having a confined portion of phase change material on a recessed contact

Methods for fabricating memory devices using sacrificial layers and memory devices fabricated by same

PAA-based etchant, methods of using same, and resultant structures

Wire forming method for semiconductor device

Method of forming self-aligned double pattern

PAA-based etchant, methods of using same, and resultant structures

Apparatus for polishing a wafer and method for detecting a polishing end point by the same

Methods of manufacturing semiconductor memory devices with unit cells having charge trapping layers

Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the same

Slurry compositions for selectively polishing silicon nitride relative to silicon oxide, methods of polishing a silicon nitride layer and methods of manufacturing a semiconductor device using the same

Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the same

Semiconductor device including dummy gate part and method of fabricating the same

Methods of fabricating semiconductor devices including channel layers having improved defect density and surface roughness characteristics

Slurry delivery system, chemical mechanical polishing apparatus and method for using the same

Slurry composition for use in chemical mechanical polishing of metal wiring

Slurry compositions and CMP methods using the same

Method of manufacturing nonvolatile semiconductor memory device

Method of fabricating self-aligned contact pad using chemical mechanical polishing process

Cleaning solution and cleaning method of a semiconductor device

Cleaning solution and cleaning method of a semiconductor device

Cleaning solution and cleaning method of a semiconductor device

Polishing pad conditioner and chemical mechanical polishing apparatus having the same

Semiconductor capacitor structure and method for manufacturing the same

Chemical mechanical polishing methods utilizing pH-adjusted polishing solutions

Methods of fabricating semiconductor devices and semiconductor devices including a contact plug processed by rapid thermal annealing

Method for cleaning substrate having exposed silicon and silicon germanium layers and related method for fabricating semiconductor device

Integrated circuit device isolation methods using high selectivity chemical-mechanical polishing

Method of fabricating a non-volatile memory device having a tunnel-insulating layer including more than two portions of different thickness

Method of forming fine pitch hardmask patterns and method of forming fine patterns of semiconductor device using the same

Apparatus for treating wafers using supercritical fluid

Phase change memory elements having a confined portion of phase change material on a recessed contact

Transistor having a metal nitride layer pattern, etchant and methods of forming the same

Semiconductor capacitor structure and method for manufacturing the same

Method for manufacturing multi-level transistor comprising forming selective epitaxial growth layer

Cleaning solution for silicon surface and methods of fabricating semiconductor device using the same

Slurry, chemical mechanical polishing method using the slurry, and method of forming metal wiring using the slurry

Method of manufacturing capacitor of semiconductor device

CMP slurry for forming aluminum film, CMP method using the slurry, and method for forming aluminum wiring using the CMP method

LEE HYO-SAN

Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods

Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods

Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods

LEE JONG-WON

Slurry composition for chemical-mechanical polishing and method of chemical-mechanical polishing with the same

KIM GO-UN

Composition for etching silicon oxide layer, method for etching semiconductor device using the same, and composition for etching semiconductor device