P

Inventor

YOON BO-UN

KR105 patents
⚠️ This page may combine multiple inventors who share the name “YOON BO-UN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

35 patents
US6626968B2Sep 30, 2003

Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the same

SAMSUNG ELECTRONICS CO LTD53 citations96
US8344385B2Jan 1, 2013

Vertical-type semiconductor device

SAMSUNG ELECTRONICS CO LTD43 citations94
US6914001B2Jul 5, 2005

Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same

SAMSUNG ELECTRONICS CO LTD20 citations93
US6610596B1Aug 26, 2003

Method of forming metal interconnection using plating and semiconductor device manufactured by the method

SAMSUNG ELECTRONICS CO LTD33 citations93
US6887137B2May 3, 2005

Chemical mechanical polishing slurry and chemical mechanical polishing method using the same

SAMSUNG ELECTRONICS CO LTD28 citations92
US6517412B2Feb 11, 2003

Method of controlling wafer polishing time using sample-skip algorithm and wafer polishing using the same

SAMSUNG ELECTRONICS CO LTD40 citations92
US7531456B2May 12, 2009

Method of forming self-aligned double pattern

SAMSUNG ELECTRONICS CO LTD29 citations91
US9947672B2Apr 17, 2018

Semiconductor devices including a dummy gate structure on a fin

SAMSUNG ELECTRONICS CO LTD4 citations84
US8038508B2Oct 18, 2011

Apparatus for polishing a wafer and method for detecting a polishing end point by the same

SAMSUNG ELECTRONICS CO LTD7 citations84
US7196010B2Mar 27, 2007

Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the same

SAMSUNG ELECTRONICS CO LTD16 citations84
US9659940B2May 23, 2017

Semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD10 citations83
US9627542B2Apr 18, 2017

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD6 citations83
US9305825B2Apr 5, 2016

Methods of fabricating semiconductor devices including fin-shaped active regions

SAMSUNG ELECTRONICS CO LTD7 citations83
US6335287B1Jan 1, 2002

Method of forming trench isolation regions

SAMSUNG ELECTRONICS CO LTD14 citations83
US8053845B2Nov 8, 2011

Semiconductor device including dummy gate part and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD7 citations82
US7678625B2Mar 16, 2010

Methods of fabricating semiconductor devices including channel layers having improved defect density and surface roughness characteristics

SAMSUNG ELECTRONICS CO LTD8 citations82
US6930054B2Aug 16, 2005

Slurry composition for use in chemical mechanical polishing of metal wiring

SAMSUNG ELECTRONICS CO LTD13 citations82
US10943908B2Mar 9, 2021

Method of forming semiconductor device

SAMSUNG ELECTRONICS CO LTD7 citations79
US10032890B2Jul 24, 2018

Method of manufacturing semiconductor devices

SAMSUNG ELECTRONICS CO LTD7 citations77
US7670942B2Mar 2, 2010

Method of fabricating self-aligned contact pad using chemical mechanical polishing process

SAMSUNG ELECTRONICS CO LTD6 citations74
US6855267B2Feb 15, 2005

Chemical mechanical polishing slurry

SAMSUNG ELECTRONICS CO LTD10 citations74
US6514862B2Feb 4, 2003

Wafer polishing slurry and chemical mechanical polishing (CMP) method using the same

SAMSUNG ELECTRONICS CO LTD8 citations74
US6117766ASep 12, 2000

Method of forming contact plugs in a semiconductor device

SAMSUNG ELECTRONICS CO LTD9 citations74
US10096605B2Oct 9, 2018

Semiconductor devices including a dummy gate structure on a fin

SAMSUNG ELECTRONICS CO LTD3 citations73
US9136135B2Sep 15, 2015

Method of fabricating semiconductor device

SAMSUNG ELECTRONICS CO LTD4 citations73
US6121146ASep 19, 2000

Method for forming contact plugs of a semiconductor device

SAMSUNG ELECTRONICS CO LTD10 citations73
US10734380B2Aug 4, 2020

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations72
US10192973B2Jan 29, 2019

Methods of forming semiconductor devices including trench walls having multiple slopes

SAMSUNG ELECTRONICS CO LTD5 citations72
US10090190B2Oct 2, 2018

Methods of fabricating semiconductor devices including fin-shaped active regions

SAMSUNG ELECTRONICS CO LTD2 citations72
US6548388B2Apr 15, 2003

Semiconductor device including gate electrode having damascene structure and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD9 citations72
US10403640B2Sep 3, 2019

Semiconductor devices including insulating capping structures

SAMSUNG ELECTRONICS CO LTD3 citations71
US10128246B2Nov 13, 2018

Semiconductor devices including an isolation layer on a fin and methods of forming semiconductor devices including an isolation layer on a fin

SAMSUNG ELECTRONICS CO LTD3 citations71
US10109529B2Oct 23, 2018

Semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD6 citations71
US11011526B2May 18, 2021

Methods of manufacturing semiconductor devices

SAMSUNG ELECTRONICS CO LTD4 citations70
US9590073B2Mar 7, 2017

Methods of fabricating semiconductor devices

SAMSUNG ELECTRONICS CO LTD4 citations69

PARK SANG-JINE

7 patents

KWON BYOUNG-HO

3 patents

KANG DAE-HYUK

2 patents

YOUN YOUNG-SANG

1 patent

OKI SEMICONDUCTOR CO LTD

1 patent

JEONG JI MIN

1 patent

Showing the top 50 of 105 patents by PatentIndex Score.