Inventor
LEE SANG-HYEOB
US34 patents
⚠️ This page may combine multiple inventors who share the name “LEE SANG-HYEOB”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
10 patentsUS8900999B1Dec 2, 2014
Low temperature high pressure high H2/WF6 ratio W process for 3D NAND application
APPLIED MATERIALS INC423 citations98
US7732327B2Jun 8, 2010
Vapor deposition of tungsten materials
APPLIED MATERIALS INC58 citations96
US8617985B2Dec 31, 2013
High temperature tungsten metallization process
APPLIED MATERIALS INC7 citations84
US9169556B2Oct 27, 2015
Tungsten growth modulation by controlling surface composition
APPLIED MATERIALS INC9 citations82
US10793951B2Oct 6, 2020
Apparatus to improve substrate temperature uniformity
APPLIED MATERIALS INC3 citations73
US9957615B2May 1, 2018
Apparatus to improve substrate temperature uniformity
APPLIED MATERIALS INC4 citations73
US10157787B2Dec 18, 2018
Method and apparatus for depositing cobalt in a feature
APPLIED MATERIALS INC4 citations71
US11948836B2Apr 2, 2024
Deposition of metal films with tungsten liner
APPLIED MATERIALS INC0 citations61
US11171045B2Nov 9, 2021
Deposition of metal films with tungsten liner
APPLIED MATERIALS INC0 citations61
US10714388B2Jul 14, 2020
Method and apparatus for depositing cobalt in a feature
APPLIED MATERIALS INC0 citations51
NOVELLUS SYSTEMS INC
7 patentsUS6635965B1Oct 21, 2003
Method for producing ultra-thin tungsten layers with improved step coverage
NOVELLUS SYSTEMS INC245 citations99
US7141494B2Nov 28, 2006
Method for reducing tungsten film roughness and improving step coverage
NOVELLUS SYSTEMS INC147 citations98
US6844258B1Jan 18, 2005
Selective refractory metal and nitride capping
NOVELLUS SYSTEMS INC260 citations98
US7157798B1Jan 2, 2007
Selective refractory metal and nitride capping
NOVELLUS SYSTEMS INC68 citations96
US9583385B2Feb 28, 2017
Method for producing ultra-thin tungsten layers with improved step coverage
NOVELLUS SYSTEMS INC31 citations94
US9076843B2Jul 7, 2015
Method for producing ultra-thin tungsten layers with improved step coverage
NOVELLUS SYSTEMS INC23 citations93
US6887781B2May 3, 2005
Method for the formation of diffusion barrier
NOVELLUS SYSTEMS INC9 citations73
HYUNDAI ELECTRONICS IND
7 patentsUS6258725B1Jul 10, 2001
Method for forming metal line of semiconductor device by (TiA1)N anti-reflective coating layer
HYUNDAI ELECTRONICS IND46 citations92
US6358789B2Mar 19, 2002
Method for manufacturing a semiconductor device having a capacitor
HYUNDAI ELECTRONICS IND9 citations74
US6171941B1Jan 9, 2001
Method for fabricating capacitor of semiconductor memory device using titanium aluminum nitride as diffusion-inhibiting layer
HYUNDAI ELECTRONICS IND8 citations74
US6087259AJul 11, 2000
Method for forming bit lines of semiconductor devices
HYUNDAI ELECTRONICS IND7 citations74
US6184113B1Feb 6, 2001
Method of manufacturing a gate electrode in a semiconductor device
HYUNDAI ELECTRONICS IND9 citations72
US6323083B1Nov 27, 2001
Method for forming lower electrode structure of capacitor of semiconductor device
HYUNDAI ELECTRONICS IND5 citations63
US5918142AJun 29, 1999
Method for fabricating a semiconductor device
HYUNDAI ELECTRONICS IND2 citations62
LEE SANG-HYEOB
2 patentsUS9129945B2Sep 8, 2015
Formation of liner and barrier for tungsten as gate electrode and as contact plug to reduce resistance and enhance device performance
LEE SANG-HYEOB10 citations82
US8865594B2Oct 21, 2014
Formation of liner and barrier for tungsten as gate electrode and as contact plug to reduce resistance and enhance device performance
LEE SANG-HYEOB12 citations82