Inventor
COLLINS JOSHUA
US45 patents
⚠️ This page may combine multiple inventors who share the name “COLLINS JOSHUA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LAM RES CORP
16 patentsUS10573522B2Feb 25, 2020
Method for preventing line bending during metal fill process
LAM RES CORP38 citations96
US9595470B2Mar 14, 2017
Methods of preparing tungsten and tungsten nitride thin films using tungsten chloride precursor
LAM RES CORP27 citations94
US11355345B2Jun 7, 2022
Method for preventing line bending during metal fill process
LAM RES CORP21 citations93
US10777453B2Sep 15, 2020
Low resistivity films containing molybdenum
LAM RES CORP18 citations93
US10510590B2Dec 17, 2019
Low resistivity films containing molybdenum
LAM RES CORP26 citations93
US9978605B2May 22, 2018
Method of forming low resistivity fluorine free tungsten film without nucleation
LAM RES CORP23 citations93
US11970776B2Apr 30, 2024
Atomic layer deposition of metal films
LAM RES CORP9 citations85
US11549175B2Jan 10, 2023
Method of depositing tungsten and other metals in 3D NAND structures
LAM RES CORP17 citations85
US10546751B2Jan 28, 2020
Forming low resistivity fluorine free tungsten film without nucleation
LAM RES CORP8 citations83
US12351914B2Jul 8, 2025
Deposition of films using molybdenum precursors
LAM RES CORP2 citations74
US12362188B2Jul 15, 2025
Method for preventing line bending during metal fill process
LAM RES CORP2 citations73
US10087523B2Oct 2, 2018
Vapor delivery method and apparatus for solid and liquid precursors
LAM RES CORP5 citations73
US12327762B2Jun 10, 2025
Molybdenum fill
LAM RES CORP3 citations71
US10214807B2Feb 26, 2019
Atomic layer deposition of tungsten for enhanced fill and reduced substrate attack
LAM RES CORP3 citations71
US11225712B2Jan 18, 2022
Atomic layer deposition of tungsten for enhanced fill and reduced substrate attack
LAM RES CORP0 citations60
US12227842B2Feb 18, 2025
Vapor accumulator for corrosive gases with purging
LAM RES CORP0 citations50
NOVELLUS SYSTEMS INC
13 patentsUS6635965B1Oct 21, 2003
Method for producing ultra-thin tungsten layers with improved step coverage
NOVELLUS SYSTEMS INC245 citations99
US8048805B2Nov 1, 2011
Methods for growing low-resistivity tungsten film
NOVELLUS SYSTEMS INC47 citations98
US8043972B1Oct 25, 2011
Adsorption based material removal process
NOVELLUS SYSTEMS INC537 citations98
US7754604B2Jul 13, 2010
Reducing silicon attack and improving resistivity of tungsten nitride film
NOVELLUS SYSTEMS INC56 citations98
US7589017B2Sep 15, 2009
Methods for growing low-resistivity tungsten film
NOVELLUS SYSTEMS INC103 citations98
US7416989B1Aug 26, 2008
Adsorption based material removal process
NOVELLUS SYSTEMS INC378 citations98
US7141494B2Nov 28, 2006
Method for reducing tungsten film roughness and improving step coverage
NOVELLUS SYSTEMS INC147 citations98
US7005372B2Feb 28, 2006
Deposition of tungsten nitride
NOVELLUS SYSTEMS INC187 citations98
US7955972B2Jun 7, 2011
Methods for growing low-resistivity tungsten for high aspect ratio and small features
NOVELLUS SYSTEMS INC87 citations97
US7691749B2Apr 6, 2010
Deposition of tungsten nitride
NOVELLUS SYSTEMS INC97 citations97
US7262125B2Aug 28, 2007
Method of forming low-resistivity tungsten interconnects
NOVELLUS SYSTEMS INC91 citations97
US9583385B2Feb 28, 2017
Method for producing ultra-thin tungsten layers with improved step coverage
NOVELLUS SYSTEMS INC31 citations94
US9076843B2Jul 7, 2015
Method for producing ultra-thin tungsten layers with improved step coverage
NOVELLUS SYSTEMS INC23 citations93
APPLIED MATERIALS INC
10 patentsUS8900999B1Dec 2, 2014
Low temperature high pressure high H2/WF6 ratio W process for 3D NAND application
APPLIED MATERIALS INC423 citations98
US8617985B2Dec 31, 2013
High temperature tungsten metallization process
APPLIED MATERIALS INC7 citations84
US9169556B2Oct 27, 2015
Tungsten growth modulation by controlling surface composition
APPLIED MATERIALS INC9 citations82
US9245769B2Jan 26, 2016
Directional SiO2 etch using plasma pre-treatment and high-temperature etchant deposition
APPLIED MATERIALS INC4 citations73
US9177780B2Nov 3, 2015
Directional SiO2 etch using plasma pre-treatment and high-temperature etchant deposition
APPLIED MATERIALS INC5 citations73
US8980761B2Mar 17, 2015
Directional SIO2 etch using low-temperature etchant deposition and plasma post-treatment
APPLIED MATERIALS INC4 citations73
US9275865B2Mar 1, 2016
Plasma treatment of film for impurity removal
APPLIED MATERIALS INC2 citations61
US9653318B2May 16, 2017
Directional SiO2 etch using plasma pre-treatment and high-temperature etchant deposition
APPLIED MATERIALS INC1 citations52
US9202745B2Dec 1, 2015
Directional SiO2 etch using low-temperature etchant deposition and plasma post-treatment
APPLIED MATERIALS INC1 citations52
US9051655B2Jun 9, 2015
Boron ionization for aluminum oxide etch enhancement
APPLIED MATERIALS INC1 citations52