Inventor
CHANSEOB SHIN
KR2 patents
Patents
2 patentsUS8796693B2Aug 5, 2014
Successive ionic layer adsorption and reaction process for depositing epitaxial ZnO on III-nitride-based light emitting diode and light emitting diode including epitaxial ZnO
SEOUL SEMICONDUCTOR CO LTD7 citations79
US8957427B2Feb 17, 2015
Successive ionic layer adsorption and reaction process for depositing epitaxial ZnO on III-nitride-based light emitting diode and light emitting diode including epitaxial ZnO
SEOUL SEMICONDUCTOR CO LTD0 citations44