Inventor
GUO TED
US36 patents
⚠️ This page may combine multiple inventors who share the name “GUO TED”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
33 patentsUS6656831B1Dec 2, 2003
Plasma-enhanced chemical vapor deposition of a metal nitride layer
APPLIED MATERIALS INC275 citations99
US6207222B1Mar 27, 2001
Dual damascene metallization
APPLIED MATERIALS INC120 citations99
US5989623ANov 23, 1999
Dual damascene metallization
APPLIED MATERIALS INC146 citations99
US6139697AOct 31, 2000
Low temperature integrated via and trench fill process and apparatus
APPLIED MATERIALS INC117 citations98
US6001420ADec 14, 1999
Semi-selective chemical vapor deposition
APPLIED MATERIALS INC92 citations98
US6169030B1Jan 2, 2001
Metallization process and method
APPLIED MATERIALS INC57 citations96
US6120844ASep 19, 2000
Deposition film orientation and reflectivity improvement using a self-aligning ultra-thin layer
APPLIED MATERIALS INC57 citations96
US6066358AMay 23, 2000
Blanket-selective chemical vapor deposition using an ultra-thin nucleation layer
APPLIED MATERIALS INC62 citations96
US5877087AMar 2, 1999
Low temperature integrated metallization process and apparatus
APPLIED MATERIALS INC69 citations96
US5763010AJun 9, 1998
Thermal post-deposition treatment of halogen-doped films to improve film stability and reduce halogen migration to interconnect layers
APPLIED MATERIALS INC61 citations95
US6458684B1Oct 1, 2002
Single step process for blanket-selective CVD aluminum deposition
APPLIED MATERIALS INC42 citations93
US6139905AOct 31, 2000
Integrated CVD/PVD Al planarization using ultra-thin nucleation layers
APPLIED MATERIALS INC24 citations93
US6528180B1Mar 4, 2003
Liner materials
APPLIED MATERIALS INC26 citations92
US6430458B1Aug 6, 2002
Semi-selective chemical vapor deposition
APPLIED MATERIALS INC18 citations92
US6110828AAug 29, 2000
In-situ capped aluminum plug (CAP) process using selective CVD AL for integrated plug/interconnect metallization
APPLIED MATERIALS INC50 citations92
US6079354AJun 27, 2000
Thermal post-deposition treatment of halogen-doped films to improve film stability and reduce halogen migration to interconnect layers
APPLIED MATERIALS INC20 citations92
US6080665AJun 27, 2000
Integrated nitrogen-treated titanium layer to prevent interaction of titanium and aluminum
APPLIED MATERIALS INC39 citations92
US5956608ASep 21, 1999
Modulating surface morphology of barrier layers
APPLIED MATERIALS INC29 citations92
US6537905B1Mar 25, 2003
Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plug
APPLIED MATERIALS INC37 citations91
US7824743B2Nov 2, 2010
Deposition processes for titanium nitride barrier and aluminum
APPLIED MATERIALS INC24 citations89
US7867900B2Jan 11, 2011
Aluminum contact integration on cobalt silicide junction
APPLIED MATERIALS INC18 citations84
US7112528B2Sep 26, 2006
Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plug
APPLIED MATERIALS INC14 citations82
US7186319B2Mar 6, 2007
Multi-track magnetron exhibiting more uniform deposition and reduced rotational asymmetry
APPLIED MATERIALS INC15 citations80
US6726776B1Apr 27, 2004
Low temperature integrated metallization process and apparatus
APPLIED MATERIALS INC9 citations74
US6716733B2Apr 6, 2004
CVD-PVD deposition process
APPLIED MATERIALS INC11 citations74
US6355560B1Mar 12, 2002
Low temperature integrated metallization process and apparatus
APPLIED MATERIALS INC12 citations74
US6077781AJun 20, 2000
Single step process for blanket-selective CVD aluminum deposition
APPLIED MATERIALS INC12 citations74
US6509274B1Jan 21, 2003
Method for forming aluminum lines over aluminum-filled vias in a semiconductor substrate
APPLIED MATERIALS INC11 citations72
US7378002B2May 27, 2008
Aluminum sputtering while biasing wafer
APPLIED MATERIALS INC6 citations63
US6743714B2Jun 1, 2004
Low temperature integrated metallization process and apparatus
APPLIED MATERIALS INC2 citations63
US7857947B2Dec 28, 2010
Unique passivation technique for a CVD blocker plate to prevent particle formation
APPLIED MATERIALS INC4 citations62
US6605531B1Aug 12, 2003
Hole-filling technique using CVD aluminum and PVD aluminum integration
APPLIED MATERIALS INC1 citations52
US9593417B2Mar 14, 2017
Gas line weldment design and process for CVD aluminum
APPLIED MATERIALS INC0 citations51