P

Inventor

PETERS CARSTEN

DE37 patents
⚠️ This page may combine multiple inventors who share the name “PETERS CARSTEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ADVANCED MICRO DEVICES INC

13 patents
US7928004B2Apr 19, 2011

Nano imprint technique with increased flexibility with respect to alignment and feature shaping

ADVANCED MICRO DEVICES INC16 citations92
US7678690B2Mar 16, 2010

Semiconductor device comprising a contact structure with increased etch selectivity

ADVANCED MICRO DEVICES INC12 citations84
US7592258B2Sep 22, 2009

Metallization layer of a semiconductor device having differently thick metal lines and a method of forming the same

ADVANCED MICRO DEVICES INC7 citations74
US7416973B2Aug 26, 2008

Method of increasing the etch selectivity in a contact structure of semiconductor devices

ADVANCED MICRO DEVICES INC8 citations73
US7875514B2Jan 25, 2011

Technique for compensating for a difference in deposition behavior in an interlayer dielectric material

ADVANCED MICRO DEVICES INC2 citations63
US7608501B2Oct 27, 2009

Technique for creating different mechanical strain by forming a contact etch stop layer stack having differently modified intrinsic stress

ADVANCED MICRO DEVICES INC2 citations62
US7482219B2Jan 27, 2009

Technique for creating different mechanical strain by a contact etch stop layer stack with an intermediate etch stop layer

ADVANCED MICRO DEVICES INC6 citations62
US7915170B2Mar 29, 2011

Reducing contamination of semiconductor substrates during beol processing by providing a protection layer at the substrate edge

ADVANCED MICRO DEVICES INC5 citations57
US7910496B2Mar 22, 2011

Technique for forming an interlayer dielectric material of increased reliability above a structure including closely spaced lines

ADVANCED MICRO DEVICES INC0 citations52
US7906815B2Mar 15, 2011

Increased reliability for a contact structure to connect an active region with a polysilicon line

ADVANCED MICRO DEVICES INC0 citations52
US7785956B2Aug 31, 2010

Technique for compensating for a difference in deposition behavior in an interlayer dielectric material

ADVANCED MICRO DEVICES INC0 citations52
US7767593B2Aug 3, 2010

Semiconductor device including field effect transistors laterally enclosed by interlayer dielectric material having increased intrinsic stress

ADVANCED MICRO DEVICES INC1 citations52
US7998823B2Aug 16, 2011

Method for reducing leakage currents caused by misalignment of a contact structure by increasing an error tolerance of the contact patterning process

ADVANCED MICRO DEVICES INC0 citations42

GLOBALFOUNDRIES INC

9 patents

HILTI AG

9 patents

SEIDEL ROBERT

2 patents

FEUSTEL FRANK

1 patent

GLOBALFOUNDRIES US INC

1 patent

NOVARTIS AG

1 patent

PFÜTZNER EGON RONNY

1 patent