Inventor
LIN SHYUE-SHYH
TW28 patents
⚠️ This page may combine multiple inventors who share the name “LIN SHYUE-SHYH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
10 patentsUS6825133B2Nov 30, 2004
Use of fluorine implantation to form a charge balanced nitrided gate dielectric layer
TAIWAN SEMICONDUCTOR MFG27 citations92
US7663237B2Feb 16, 2010
Butted contact structure
TAIWAN SEMICONDUCTOR MFG35 citations88
US8362573B2Jan 29, 2013
Integrated circuits and manufacturing methods thereof
TAIWAN SEMICONDUCTOR MFG6 citations84
US7349234B2Mar 25, 2008
Magnetic memory array
TAIWAN SEMICONDUCTOR MFG9 citations84
US8994116B2Mar 31, 2015
Hybrid gate process for fabricating FinFET device
TAIWAN SEMICONDUCTOR MFG10 citations82
US8034677B2Oct 11, 2011
Integrated method for forming high-k metal gate FinFET devices
TAIWAN SEMICONDUCTOR MFG9 citations82
US9111768B2Aug 18, 2015
Semiconductor devices, methods of manufacture thereof, and methods of forming resistors
TAIWAN SEMICONDUCTOR MFG5 citations73
US8356262B1Jan 15, 2013
Cell architecture and method
TAIWAN SEMICONDUCTOR MFG5 citations73
US8373219B2Feb 12, 2013
Method of fabricating a gate stack integration of complementary MOS device
TAIWAN SEMICONDUCTOR MFG4 citations62
US9385213B2Jul 5, 2016
Integrated circuits and manufacturing methods thereof
TAIWAN SEMICONDUCTOR MFG0 citations52
TAIWAN SEMICONDUCTOR MFG CO LTD
6 patentsUS9543193B2Jan 10, 2017
Non-hierarchical metal layers for integrated circuits
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10224245B2Mar 5, 2019
Method of making a finFET, and finFET formed by the method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12094880B2Sep 17, 2024
Integrated circuits and manufacturing methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11581314B2Feb 14, 2023
Integrated circuits and manufacturing methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10535655B2Jan 14, 2020
Integrated circuits and manufacturing methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10515856B2Dec 24, 2019
Method of making a FinFET, and FinFET formed by the method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations47