P

Inventor

YI LIANG

SG28 patents
⚠️ This page may combine multiple inventors who share the name “YI LIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

UNITED MICROELECTRONICS CORP

24 patents
US10090465B2Oct 2, 2018

Semiconductor device having memory cell structure and method of manufacturing the same

UNITED MICROELECTRONICS CORP23 citations93
US9799705B1Oct 24, 2017

Semiconductor device and method of making the same

UNITED MICROELECTRONICS CORP30 citations93
US9806255B1Oct 31, 2017

Resistive random access memory and method of forming the same

UNITED MICROELECTRONICS CORP19 citations92
US9859335B1Jan 2, 2018

Semiconductor device having memory cell structure

UNITED MICROELECTRONICS CORP11 citations83
US11056495B2Jul 6, 2021

Structure of memory device having floating gate with protruding structure

UNITED MICROELECTRONICS CORP8 citations82
US10332884B2Jun 25, 2019

FinFET semiconductor device

UNITED MICROELECTRONICS CORP13 citations82
US9379128B1Jun 28, 2016

Split gate non-volatile memory device and method for fabricating the same

UNITED MICROELECTRONICS CORP7 citations82
US12040369B2Jul 16, 2024

Semiconductor memory device and fabrication method thereof

UNITED MICROELECTRONICS CORP3 citations74
US10868197B1Dec 15, 2020

Structure of memory device and fabrication method thereof

UNITED MICROELECTRONICS CORP4 citations73
US10192874B2Jan 29, 2019

Nonvolatile memory cell and fabrication method thereof

UNITED MICROELECTRONICS CORP6 citations73
US11765893B2Sep 19, 2023

Structure of memory device having floating gate with protruding structure

UNITED MICROELECTRONICS CORP1 citations71
US9852912B1Dec 26, 2017

Method of manufacturing semiconductor device for reducing grain size of polysilicon

UNITED MICROELECTRONICS CORP2 citations70
US12527036B2Jan 13, 2026

Semiconductor memory device and fabrication method thereof

UNITED MICROELECTRONICS CORP0 citations62
US12414294B2Sep 9, 2025

Memory device

UNITED MICROELECTRONICS CORP0 citations62
US12057481B2Aug 6, 2024

Method for forming semiconductor memory device having a t-shaped erase gate

UNITED MICROELECTRONICS CORP0 citations62
US11882699B2Jan 23, 2024

Silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FINFET and forming method thereof

UNITED MICROELECTRONICS CORP0 citations62
US11856771B2Dec 26, 2023

Method of forming silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET

UNITED MICROELECTRONICS CORP0 citations62
US11699730B2Jul 11, 2023

Semiconductor memory device and fabrication method thereof

UNITED MICROELECTRONICS CORP0 citations62
US12185532B2Dec 31, 2024

Structure of memory device having floating gate with protruding structure

UNITED MICROELECTRONICS CORP0 citations60
US11100995B2Aug 24, 2021

Structure of a nonvolatile memory device with a low-voltage transistor fabricated on a substrate

UNITED MICROELECTRONICS CORP0 citations60
US10153359B2Dec 11, 2018

Semiconductor structure and method for forming the same

UNITED MICROELECTRONICS CORP0 citations52
US11943920B2Mar 26, 2024

Split gate memory with control gate having nonplanar top surface

UNITED MICROELECTRONICS CORP0 citations50
US10825522B2Nov 3, 2020

Method for fabricating low and high/medium voltage transistors on substrate

UNITED MICROELECTRONICS CORP0 citations50
US9966383B2May 8, 2018

Semiconductor structure and manufacturing method thereof

UNITED MICROELECTRONICS CORP0 citations41

GLOBALFOUNDRIES SG PTE LTD

2 patents

VERMA PURAKH RAJ

1 patent

HSIEH KUAN-HONG

1 patent