Inventor
YI LIANG
SG28 patents
⚠️ This page may combine multiple inventors who share the name “YI LIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
24 patentsUS10090465B2Oct 2, 2018
Semiconductor device having memory cell structure and method of manufacturing the same
UNITED MICROELECTRONICS CORP23 citations93
US9799705B1Oct 24, 2017
Semiconductor device and method of making the same
UNITED MICROELECTRONICS CORP30 citations93
US9806255B1Oct 31, 2017
Resistive random access memory and method of forming the same
UNITED MICROELECTRONICS CORP19 citations92
US9859335B1Jan 2, 2018
Semiconductor device having memory cell structure
UNITED MICROELECTRONICS CORP11 citations83
US11056495B2Jul 6, 2021
Structure of memory device having floating gate with protruding structure
UNITED MICROELECTRONICS CORP8 citations82
US10332884B2Jun 25, 2019
FinFET semiconductor device
UNITED MICROELECTRONICS CORP13 citations82
US9379128B1Jun 28, 2016
Split gate non-volatile memory device and method for fabricating the same
UNITED MICROELECTRONICS CORP7 citations82
US12040369B2Jul 16, 2024
Semiconductor memory device and fabrication method thereof
UNITED MICROELECTRONICS CORP3 citations74
US10868197B1Dec 15, 2020
Structure of memory device and fabrication method thereof
UNITED MICROELECTRONICS CORP4 citations73
US10192874B2Jan 29, 2019
Nonvolatile memory cell and fabrication method thereof
UNITED MICROELECTRONICS CORP6 citations73
US11765893B2Sep 19, 2023
Structure of memory device having floating gate with protruding structure
UNITED MICROELECTRONICS CORP1 citations71
US9852912B1Dec 26, 2017
Method of manufacturing semiconductor device for reducing grain size of polysilicon
UNITED MICROELECTRONICS CORP2 citations70
US12527036B2Jan 13, 2026
Semiconductor memory device and fabrication method thereof
UNITED MICROELECTRONICS CORP0 citations62
US12414294B2Sep 9, 2025
Memory device
UNITED MICROELECTRONICS CORP0 citations62
US12057481B2Aug 6, 2024
Method for forming semiconductor memory device having a t-shaped erase gate
UNITED MICROELECTRONICS CORP0 citations62
US11882699B2Jan 23, 2024
Silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FINFET and forming method thereof
UNITED MICROELECTRONICS CORP0 citations62
US11856771B2Dec 26, 2023
Method of forming silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET
UNITED MICROELECTRONICS CORP0 citations62
US11699730B2Jul 11, 2023
Semiconductor memory device and fabrication method thereof
UNITED MICROELECTRONICS CORP0 citations62
US12185532B2Dec 31, 2024
Structure of memory device having floating gate with protruding structure
UNITED MICROELECTRONICS CORP0 citations60
US11100995B2Aug 24, 2021
Structure of a nonvolatile memory device with a low-voltage transistor fabricated on a substrate
UNITED MICROELECTRONICS CORP0 citations60
US10153359B2Dec 11, 2018
Semiconductor structure and method for forming the same
UNITED MICROELECTRONICS CORP0 citations52
US11943920B2Mar 26, 2024
Split gate memory with control gate having nonplanar top surface
UNITED MICROELECTRONICS CORP0 citations50
US10825522B2Nov 3, 2020
Method for fabricating low and high/medium voltage transistors on substrate
UNITED MICROELECTRONICS CORP0 citations50
US9966383B2May 8, 2018
Semiconductor structure and manufacturing method thereof
UNITED MICROELECTRONICS CORP0 citations41