Inventor

KUO KANG-MIN

TW56 patents

⚠️ This page may combine multiple inventors who share the name “KUO KANG-MIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KUO KANG-MIN

TAIWAN SEMICONDUCTOR MFG CO LTD

Structure and formation method of semiconductor device structure with a dummy fin structure

Semiconductor structure with contact plug

Semiconductor structure with insertion layer and method for manufacturing the same

Systems and methods to enhance passivation integrity

Systems and methods to enhance passivation integrity

Semiconductor device and manufacturing method thereof

BEOL selectivity stress film

Semiconductor device and manufacturing method thereof

Structure and formation method of semiconductor device structure with a dummy fin structure

Semiconductor device with contact plug

Structure and formation method of semiconductor device structure

Semiconductor device structure and method for forming the same

Semiconductor device structure having a plurality of gate structures

Semiconductor device with self-protecting fuse

Shallow trench isolation structure with raised portion between active areas and manufacturing method thereof

Structure and formation method of semiconductor device structure with gate stack

Method for manufacturing gate structure with additional oxide layer

Structure and formation method of semiconductor device structure with gate stack

Semiconductor device having contact plug

Gate structure with additional oxide layer and method for manufacturing the same

Semiconductor device

Semiconductor device and manufacturing method thereof

Structure and formation method of semiconductor device structure with gate stack

Structure and formation method of semiconductor device structure with a dummy fin structure

Method for forming contact plug

Method of forming shallow trench isolation structure

Semiconductor device structure and method for forming the same

Semiconductor device having fins

Semiconductor device having strain modulator in interlayer dielectric layer

Structure and formation method of semiconductor device structure with gate stack

Structure and formation method of semiconductor device structure with gate stack

Semiconductor device and manufacturing method thereof

Semiconductor device structure and method for forming the same

Systems and methods to enhance passivation integrity

Structure and formation method of semiconductor device structure with a dummy fin structure

Semiconductor device

Method for manufacturing gate structure with additional oxide layer

Systems and methods to enhance passivation integrity

Semiconductor device structure and method for forming the same

Systems and methods to enhance passivation integrity

Gate structure with additional oxide layer

Semiconductor device with self-protecting fuse and method of fabricating the same

Semiconductor structure with insertion layer and method for manufacturing the same

Flexible device modulation by oxide isolation structure selective etching process

Semiconductor device structure and method for forming the same

Method for forming semiconductor device structure

Systems and methods to enhance passivation integrity

Semiconductor device with self-protecting fuse and method of fabricating the same

TAIWAN SEMICONDUCTOR MFG

Removal of SOG etchback residue by argon treatment

Laminated silicate glass layer etch stop method for fabricating microelectronic product