P

Inventor

LEE KYU-CHAN

KR40 patents
⚠️ This page may combine multiple inventors who share the name “LEE KYU-CHAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

32 patents
US5701268ADec 23, 1997

Sense amplifier for integrated circuit memory devices having boosted sense and current drive capability and methods of operating same

SAMSUNG ELECTRONICS CO LTD91 citations96
US7515487B2Apr 7, 2009

Internal reference voltage generating circuit for reducing standby current and semiconductor memory device including the same

SAMSUNG ELECTRONICS CO LTD31 citations93
US7646653B2Jan 12, 2010

Driver circuits for integrated circuit devices that are operable to reduce gate induced drain leakage (GIDL) current in a transistor and methods of operating the same

SAMSUNG ELECTRONICS CO LTD23 citations92
US6930948B2Aug 16, 2005

Semiconductor memory device having an internal voltage generation circuit for selectively generating an internal voltage according to an external voltage level

SAMSUNG ELECTRONICS CO LTD27 citations92
US6678206B2Jan 13, 2004

Semiconductor memory device including standby mode for reducing current consumption of delay locked loop

SAMSUNG ELECTRONICS CO LTD31 citations92
US6025621AFeb 15, 2000

Integrated circuit memory devices having independently biased sub-well regions therein and methods of forming same

SAMSUNG ELECTRONICS CO LTD53 citations92
US5761135AJun 2, 1998

Sub-word line drivers for integrated circuit memory devices and related methods

SAMSUNG ELECTRONICS CO LTD33 citations92
US5761138AJun 2, 1998

Memory devices having a flexible redundant block architecture

SAMSUNG ELECTRONICS CO LTD51 citations92
US5703475ADec 30, 1997

Reference voltage generator with fast start-up and low stand-by power

SAMSUNG ELECTRONICS CO LTD33 citations92
US5657282AAug 12, 1997

Semiconductor memory device with stress circuit and method for supplying a stress voltage thereof

SAMSUNG ELECTRONICS CO LTD22 citations92
US5654928AAug 5, 1997

Current sense amplifier for use in a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD24 citations92
US5349556ASep 20, 1994

Row redundancy circuit sharing a fuse box

SAMSUNG ELECTRONICS CO LTD39 citations92
US6269046B1Jul 31, 2001

Semiconductor memory device having improved decoders for decoding row and column address signals

SAMSUNG ELECTRONICS CO LTD22 citations91
US5949697ASep 7, 1999

Semiconductor memory device having hierarchical input/output line structure and method for arranging the same

SAMSUNG ELECTRONICS CO LTD18 citations84
US7768853B2Aug 3, 2010

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD10 citations83
US7486576B2Feb 3, 2009

Methods and devices for preventing data stored in memory from being read out

SAMSUNG ELECTRONICS CO LTD6 citations74
US7260002B2Aug 21, 2007

Methods and devices for preventing data stored in memory from being read out

SAMSUNG ELECTRONICS CO LTD5 citations74
US6233196B1May 15, 2001

Multi-bank integrated circuit memory devices with diagonal pairs of sub-banks

SAMSUNG ELECTRONICS CO LTD13 citations74
US6005825ADec 21, 1999

Synchronous semiconductor memory device having wave pipelining control structure and method for outputting data using the same

SAMSUNG ELECTRONICS CO LTD9 citations74
US5892386AApr 6, 1999

Internal power control circuit for a semiconductor device

SAMSUNG ELECTRONICS CO LTD12 citations74
US5757716AMay 26, 1998

Integrated circuit memory devices and methods including programmable block disabling and programmable block selection

SAMSUNG ELECTRONICS CO LTD10 citations74
US5146110ASep 8, 1992

Semiconductor memory with substrate voltage generating circuit for removing unwanted substrate current during precharge cycle memory mode of operation

SAMSUNG ELECTRONICS CO LTD9 citations74
US6891767B2May 10, 2005

Semiconductor memory device and method for pre-charging the same

SAMSUNG ELECTRONICS CO LTD7 citations73
US6175263B1Jan 16, 2001

Back bias generator having transfer transistor with well bias

SAMSUNG ELECTRONICS CO LTD14 citations72
US7782688B2Aug 24, 2010

Semiconductor memory device and test method thereof

SAMSUNG ELECTRONICS CO LTD2 citations63
US5770957AJun 23, 1998

Signal generator for generating sense amplifier enable signal

SAMSUNG ELECTRONICS CO LTD3 citations63
US7869239B2Jan 11, 2011

Layout structure of bit line sense amplifiers for a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD4 citations62
US7576575B2Aug 18, 2009

Reset signal generator in semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations62
US10297228B2May 21, 2019

Display apparatus and control method thereof

SAMSUNG ELECTRONICS CO LTD1 citations57
US6909654B2Jun 21, 2005

Bit line pre-charge circuit of semiconductor memory device

SAMSUNG ELECTRONICS CO LTD0 citations52
US6323702B1Nov 27, 2001

Integrated circuit devices having circuits therein for driving large signal line loads

SAMSUNG ELECTRONICS CO LTD0 citations52
US6215715B1Apr 10, 2001

Integrated circuit memories including fuses between a decoder and a memory array for disabling defective storage cells in the memory array

SAMSUNG ELECTRONICS CO LTD1 citations51

SAMSUNG ELECTRO MECH

1 patent

LEE YUN-YOUNG

1 patent

GIL MEDICAL CT

1 patent

KIM HYE-JIN

1 patent

KIM SUNG-SOO

1 patent

HYUNDAI MOTOR CO LTD

1 patent

MIN YOUNG-SUN

1 patent

LIM SUNG-JIN

1 patent