Inventor
LEE KYU-CHAN
KR40 patents
⚠️ This page may combine multiple inventors who share the name “LEE KYU-CHAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
32 patentsUS5701268ADec 23, 1997
Sense amplifier for integrated circuit memory devices having boosted sense and current drive capability and methods of operating same
SAMSUNG ELECTRONICS CO LTD91 citations96
US7515487B2Apr 7, 2009
Internal reference voltage generating circuit for reducing standby current and semiconductor memory device including the same
SAMSUNG ELECTRONICS CO LTD31 citations93
US7646653B2Jan 12, 2010
Driver circuits for integrated circuit devices that are operable to reduce gate induced drain leakage (GIDL) current in a transistor and methods of operating the same
SAMSUNG ELECTRONICS CO LTD23 citations92
US6930948B2Aug 16, 2005
Semiconductor memory device having an internal voltage generation circuit for selectively generating an internal voltage according to an external voltage level
SAMSUNG ELECTRONICS CO LTD27 citations92
US6678206B2Jan 13, 2004
Semiconductor memory device including standby mode for reducing current consumption of delay locked loop
SAMSUNG ELECTRONICS CO LTD31 citations92
US6025621AFeb 15, 2000
Integrated circuit memory devices having independently biased sub-well regions therein and methods of forming same
SAMSUNG ELECTRONICS CO LTD53 citations92
US5761135AJun 2, 1998
Sub-word line drivers for integrated circuit memory devices and related methods
SAMSUNG ELECTRONICS CO LTD33 citations92
US5761138AJun 2, 1998
Memory devices having a flexible redundant block architecture
SAMSUNG ELECTRONICS CO LTD51 citations92
US5703475ADec 30, 1997
Reference voltage generator with fast start-up and low stand-by power
SAMSUNG ELECTRONICS CO LTD33 citations92
US5657282AAug 12, 1997
Semiconductor memory device with stress circuit and method for supplying a stress voltage thereof
SAMSUNG ELECTRONICS CO LTD22 citations92
US5654928AAug 5, 1997
Current sense amplifier for use in a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD24 citations92
US5349556ASep 20, 1994
Row redundancy circuit sharing a fuse box
SAMSUNG ELECTRONICS CO LTD39 citations92
US6269046B1Jul 31, 2001
Semiconductor memory device having improved decoders for decoding row and column address signals
SAMSUNG ELECTRONICS CO LTD22 citations91
US5949697ASep 7, 1999
Semiconductor memory device having hierarchical input/output line structure and method for arranging the same
SAMSUNG ELECTRONICS CO LTD18 citations84
US7768853B2Aug 3, 2010
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD10 citations83
US7486576B2Feb 3, 2009
Methods and devices for preventing data stored in memory from being read out
SAMSUNG ELECTRONICS CO LTD6 citations74
US7260002B2Aug 21, 2007
Methods and devices for preventing data stored in memory from being read out
SAMSUNG ELECTRONICS CO LTD5 citations74
US6233196B1May 15, 2001
Multi-bank integrated circuit memory devices with diagonal pairs of sub-banks
SAMSUNG ELECTRONICS CO LTD13 citations74
US6005825ADec 21, 1999
Synchronous semiconductor memory device having wave pipelining control structure and method for outputting data using the same
SAMSUNG ELECTRONICS CO LTD9 citations74
US5892386AApr 6, 1999
Internal power control circuit for a semiconductor device
SAMSUNG ELECTRONICS CO LTD12 citations74
US5757716AMay 26, 1998
Integrated circuit memory devices and methods including programmable block disabling and programmable block selection
SAMSUNG ELECTRONICS CO LTD10 citations74
US5146110ASep 8, 1992
Semiconductor memory with substrate voltage generating circuit for removing unwanted substrate current during precharge cycle memory mode of operation
SAMSUNG ELECTRONICS CO LTD9 citations74
US6891767B2May 10, 2005
Semiconductor memory device and method for pre-charging the same
SAMSUNG ELECTRONICS CO LTD7 citations73
US6175263B1Jan 16, 2001
Back bias generator having transfer transistor with well bias
SAMSUNG ELECTRONICS CO LTD14 citations72
US7782688B2Aug 24, 2010
Semiconductor memory device and test method thereof
SAMSUNG ELECTRONICS CO LTD2 citations63
US5770957AJun 23, 1998
Signal generator for generating sense amplifier enable signal
SAMSUNG ELECTRONICS CO LTD3 citations63
US7869239B2Jan 11, 2011
Layout structure of bit line sense amplifiers for a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD4 citations62
US7576575B2Aug 18, 2009
Reset signal generator in semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations62
US10297228B2May 21, 2019
Display apparatus and control method thereof
SAMSUNG ELECTRONICS CO LTD1 citations57
US6909654B2Jun 21, 2005
Bit line pre-charge circuit of semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations52
US6323702B1Nov 27, 2001
Integrated circuit devices having circuits therein for driving large signal line loads
SAMSUNG ELECTRONICS CO LTD0 citations52
US6215715B1Apr 10, 2001
Integrated circuit memories including fuses between a decoder and a memory array for disabling defective storage cells in the memory array
SAMSUNG ELECTRONICS CO LTD1 citations51