Inventor

JEONG MUN-MO

KR10 patents

⚠️ This page may combine multiple inventors who share the name “JEONG MUN-MO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

6 patents

US7473954B2Jan 6, 2009

Bitline of semiconductor device having stud type capping layer and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD5 citations72

US7566924B2Jul 28, 2009

Semiconductor device with gate spacer of positive slope and fabrication method thereof

SAMSUNG ELECTRONICS CO LTD3 citations60

US7217618B2May 15, 2007

Semiconductor device and method for fabricating the same using damascene process

SAMSUNG ELECTRONICS CO LTD2 citations60

US6982199B2Jan 3, 2006

Bitline of semiconductor device having stud type capping layer and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations50

US6969673B2Nov 29, 2005

Semiconductor device with gate space of positive slope and fabrication method thereof

SAMSUNG ELECTRONICS CO LTD1 citations50

US7132362B2Nov 7, 2006

Semiconductor device with contacts having uniform contact resistance and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations39

LG SEMICON CO LTD

2 patents

US5780334AJul 14, 1998

Method of fabricating capacitor of semiconductor memory device

LG SEMICON CO LTD13 citations73

US5795802AAug 18, 1998

Method for manufacturing semiconductor device

LG SEMICON CO LTD6 citations60

SK HYNIX INC

1 patent

US9287395B2Mar 15, 2016

Semiconductor device and a bit line and the whole of a bit line contact plug having a vertically uniform profile

SK HYNIX INC10 citations82

JEONG MUN MO

1 patent

US8309449B2Nov 13, 2012

Semiconductor device and method for forming the same

JEONG MUN MO12 citations79