Inventor
ISAAC RANDALL D
US3 patents
Patents
3 patentsUS4483726ANov 20, 1984
Double self-aligned fabrication process for making a bipolar transistor structure having a small polysilicon-to-extrinsic base contact area
IBM69 citations95
US4446476AMay 1, 1984
Integrated circuit having a sublayer electrical contact and fabrication thereof
IBM29 citations91
US4495512AJan 22, 1985
Self-aligned bipolar transistor with inverted polycide base contact
IBM37 citations90