Inventor
CHANG CHONG-KWANG
KR18 patents
⚠️ This page may combine multiple inventors who share the name “CHANG CHONG-KWANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
15 patentsUS9865736B2Jan 9, 2018
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations82
US10276570B2Apr 30, 2019
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations73
US10224204B1Mar 5, 2019
Method of manufacturing integrated circuit device
SAMSUNG ELECTRONICS CO LTD3 citations71
US11670657B2Jun 6, 2023
Image sensor including fence structure disposed laterally of color filters
SAMSUNG ELECTRONICS CO LTD0 citations61
US7816271B2Oct 19, 2010
Methods for forming contacts for dual stress liner CMOS semiconductor devices
SAMSUNG ELECTRONICS CO LTD6 citations61
US12074031B2Aug 27, 2024
Method of fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations60
US11024509B2Jun 1, 2021
Method of fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations60
US8357576B2Jan 22, 2013
Method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations56
US9941281B2Apr 10, 2018
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations52
US9553089B2Jan 24, 2017
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations52
US7541290B2Jun 2, 2009
Methods of forming mask patterns on semiconductor wafers that compensate for nonuniform center-to-edge etch rates during photolithographic processing
SAMSUNG ELECTRONICS CO LTD1 citations48
US8349126B2Jan 8, 2013
Apparatus for etching edge of wafer
SAMSUNG ELECTRONICS CO LTD1 citations45
US7790622B2Sep 7, 2010
Methods for removing gate sidewall spacers in CMOS semiconductor fabrication processes
SAMSUNG ELECTRONICS CO LTD0 citations41
US7541234B2Jun 2, 2009
Methods of fabricating integrated circuit transistors by simultaneously removing a photoresist layer and a carbon-containing layer on different active areas
SAMSUNG ELECTRONICS CO LTD0 citations41
US7585763B2Sep 8, 2009
Methods of fabricating integrated circuit devices using anti-reflective coating as implant blocking layer
SAMSUNG ELECTRONICS CO LTD0 citations39