Inventor
MIHAJLOVIC GORAN
US23 patents
⚠️ This page may combine multiple inventors who share the name “MIHAJLOVIC GORAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
WESTERN DIGITAL TECH INC
10 patentsUS10388305B1Aug 20, 2019
Apparatus and method for writing to magnetic media using an AC bias current to enhance the write field
WESTERN DIGITAL TECH INC18 citations93
US11839162B2Dec 5, 2023
Magnetoresistive memory device including a plurality of reference layers
WESTERN DIGITAL TECH INC3 citations73
US11361805B2Jun 14, 2022
Magnetoresistive memory device including a reference layer side dielectric spacer layer
WESTERN DIGITAL TECH INC3 citations73
US10777248B1Sep 15, 2020
Heat assisted perpendicular spin transfer torque MRAM memory cell
WESTERN DIGITAL TECH INC5 citations73
US10290337B2May 14, 2019
Three terminal SOT memory cell with anomalous hall effect
WESTERN DIGITAL TECH INC3 citations73
US10891999B1Jan 12, 2021
Perpendicular SOT MRAM
WESTERN DIGITAL TECH INC2 citations72
US10643642B2May 5, 2020
Apparatus and method for writing to magnetic media using an AC bias current to enhance the write field
WESTERN DIGITAL TECH INC5 citations72
US11968907B2Apr 23, 2024
Magnetoresistive memory device including a magnetoresistance amplification layer
WESTERN DIGITAL TECH INC0 citations62
US10957346B2Mar 23, 2021
Magnetic recording devices and methods using a write-field-enhancement structure and bias current with offset pulses
WESTERN DIGITAL TECH INC1 citations62
US11004489B2May 11, 2021
Perpendicular spin transfer torque MRAM memory cell with in-stack thermal barriers
WESTERN DIGITAL TECH INC1 citations61
SANDISK TECHNOLOGIES LLC
7 patentsUS9953692B1Apr 24, 2018
Spin orbit torque MRAM memory cell with enhanced thermal stability
SANDISK TECHNOLOGIES LLC46 citations94
US10134457B1Nov 20, 2018
Cross-point spin accumulation torque MRAM
SANDISK TECHNOLOGIES LLC32 citations93
US10211393B2Feb 19, 2019
Spin accumulation torque MRAM
SANDISK TECHNOLOGIES LLC17 citations86
US10056430B1Aug 21, 2018
MRAM with voltage dependent in-plane magnetic anisotropy
SANDISK TECHNOLOGIES LLC12 citations83
US10276783B2Apr 30, 2019
Gate voltage controlled perpendicular spin orbit torque MRAM memory cell
SANDISK TECHNOLOGIES LLC2 citations73
US10726893B2Jul 28, 2020
Perpendicular SOT-MRAM memory cell using spin swapping induced spin current
SANDISK TECHNOLOGIES LLC0 citations51
US10832750B2Nov 10, 2020
Perpendicular spin transfer torque MRAM memory cell with cap layer to achieve lower current density and increased write margin
SANDISK TECHNOLOGIES LLC0 citations40
HGST Netherlands BV
6 patentsUS9830966B2Nov 28, 2017
Three terminal SOT memory cell with anomalous Hall effect
HGST Netherlands BV35 citations94
US9293160B1Mar 22, 2016
Magnetic stabilization and scissor design for anomalous hall effect magnetic read sensor
HGST Netherlands BV16 citations84
US9099119B2Aug 4, 2015
Magnetic read sensor using spin hall effect
HGST Netherlands BV12 citations83
US10381552B2Aug 13, 2019
SOT MRAM cell with perpendicular free layer and its cross-point array realization
HGST Netherlands BV6 citations73
US9429633B2Aug 30, 2016
Magnetic sensor utilizing rashba effect in a two-dimensional conductor
HGST Netherlands BV3 citations72
US9177576B2Nov 3, 2015
Giant magneto resistive sensor and method for making same
HGST Netherlands BV0 citations51