Inventor

ROZEN JOHN

US50 patents

⚠️ This page may combine multiple inventors who share the name “ROZEN JOHN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ROZEN JOHN

IBM

Resistive switching memory stack for three-dimensional structure

Conformal replacement gate electrode for short channel devices

Patterned gate dielectrics for III-V-based CMOS circuits

Contact resistance reduction by III-V Ga deficient surface

Three-terminal neuromorphic vertical sensing

Three-terminal copper-driven neuromorphic device

Electrochemical switching device with protective encapsulation

Leakage current reduction in stacked metal-insulator-metal capacitors

Confined lateral switching cell for high density scaling

Resistive switching memory stack for three-dimensional structure

Patterned gate dielectrics for III-V-based CMOS circuits

Leakage current reduction in stacked metal-insulator-metal capacitors

Selective and conformal passivation layer for 3D high-mobility channel devices

Neuromorphic device with oxygen scavenging gate

Sub-stoichiometric metal-oxide thin films

CBRAM by subtractive etching of metals

Multifilament resistive memory with insulation layers

Self-aligned crossbar-compatible electrochemical memory structure

Three-terminal oxygen intercalation neuromorphic devices

Etch-resistant doped scavenging carbide electrodes

Sub-stoichiometric metal-oxide thin films

Two-terminal non-volatile memory cell for decoupled read and write operations

Three-dimensional confined memory cell with decoupled read-write

Neuromorphic device driven by copper ion intercalation

Laterally switching cell having sub-stoichiometric metal oxide active layer

Conformal replacement gate electrode for short channel devices

Metal-oxide-based neuromorphic device

Vertical array of resistive switching devices having restricted filament regions and tunable top electrode volume

Three-terminal neuromorphic vertical sensing

Three-terminal oxygen intercalation neuromorphic devices

Three-terminal neuromorphic vertical sensing

Vertical array of resistive switching devices having restricted filament regions and tunable top electrode volume

Resistive memory with resistance spreading layer

Structures and methods for equivalent oxide thickness scaling on silicon germanium channel or III-V channel of semiconductor device

Lateral electrochemical cell with symmetric response for neuromorphic computing

Patterned gate dielectrics for III-V-based CMOS circuits

Patterned gate dielectrics for III-V-based CMOS circuits

Leakage current reduction in stacked metal-insulator-metal capacitors

Leakage current reduction in stacked metal-insulator-metal capacitors

Binary metal oxide based interlayer for high mobility channels

Binary metal oxide based interlayer for high mobility channels

Binary metal oxide based interlayer for high mobility channels

Contact resistance reduction by III-V Ga deficient surface

Combined reactive gas species for high-mobility channel passivation

Binary metal oxide based interlayer for high mobility channels

Tailored silicon layers for transistor multi-gate control

Tailored silicon layers for transistor multi-gate control

Ligand selection for ternary oxide thin films

XCELERA

Distributed selection of a content server

ULVAC INC

Thin film formation method