Inventor
RAHIMO MUNAF
CH71 patents
⚠️ This page may combine multiple inventors who share the name “RAHIMO MUNAF”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ABB SCHWEIZ AG
14 patentsUS10109725B2Oct 23, 2018
Reverse-conducting semiconductor device
ABB SCHWEIZ AG5 citations72
US9859360B2Jan 2, 2018
Edge termination for semiconductor devices and corresponding fabrication method
ABB SCHWEIZ AG2 citations70
US10554201B2Feb 4, 2020
Solid state switch system
ABB SCHWEIZ AG2 citations67
US10411694B2Sep 10, 2019
Solid state switch system
ABB SCHWEIZ AG5 citations67
US9455340B2Sep 27, 2016
Power semiconductor device and corresponding module
ABB SCHWEIZ AG2 citations63
US7989878B2Aug 2, 2011
Cathode cell design
ABB SCHWEIZ AG3 citations63
US7224008B2May 29, 2007
Self-aligned production method for an insulated gate semiconductor device cell and insulated gate semiconductor device cell
ABB SCHWEIZ AG3 citations61
US10516022B2Dec 24, 2019
Method for manufacturing a semiconductor device
ABB SCHWEIZ AG1 citations59
US10361082B2Jul 23, 2019
Semiconductor device and method for manufacturing such a semiconductor device
ABB SCHWEIZ AG1 citations59
US10037978B2Jul 31, 2018
Semiconductor module and stack arrangement of semiconductor modules
ABB SCHWEIZ AG1 citations52
US10096538B2Oct 9, 2018
Cooling of wide bandgap semiconductor devices
ABB SCHWEIZ AG0 citations51
US10164126B2Dec 25, 2018
Junction barrier schottky diode with enhanced surge current capability
ABB SCHWEIZ AG1 citations50
US9887086B2Feb 6, 2018
Method for manufacturing a wide bandgap junction barrier schottky diode
ABB SCHWEIZ AG1 citations50
US10553437B2Feb 4, 2020
Semiconductor device and method for manufacturing such a semiconductor device
ABB SCHWEIZ AG0 citations49
ABB TECHNOLOGY AG
13 patentsUS9064925B2Jun 23, 2015
Power semiconductor device
ABB TECHNOLOGY AG7 citations82
US9105680B2Aug 11, 2015
Insulated gate bipolar transistor
ABB TECHNOLOGY AG5 citations72
US9099520B2Aug 4, 2015
Insulated gate bipolar transistor
ABB TECHNOLOGY AG4 citations72
US9543305B2Jan 10, 2017
Reverse conducting power semiconductor device
ABB TECHNOLOGY AG2 citations68
US8803192B2Aug 12, 2014
Bipolar non-punch-through power semiconductor device
ABB TECHNOLOGY AG3 citations62
US7816706B2Oct 19, 2010
Power semiconductor device
ABB TECHNOLOGY AG3 citations62
US8829563B2Sep 9, 2014
Power semiconductor device and method for manufacturing such a power semiconductor device
ABB TECHNOLOGY AG2 citations61
US8847277B2Sep 30, 2014
Reverse-conducting power semiconductor device
ABB TECHNOLOGY AG3 citations60
US9385223B2Jul 5, 2016
Reverse-conducting power semiconductor device
ABB TECHNOLOGY AG1 citations51
US9324708B2Apr 26, 2016
Power semiconductor device
ABB TECHNOLOGY AG1 citations51
US9153676B2Oct 6, 2015
Insulated gate bipolar transistor
ABB TECHNOLOGY AG0 citations51
US9006041B2Apr 14, 2015
Bipolar punch-through semiconductor device and method for manufacturing such a semiconductor device
ABB TECHNOLOGY AG1 citations51
US7446376B2Nov 4, 2008
IGBT cathode design with improved safe operating area capability
ABB TECHNOLOGY AG1 citations51
MQSEMI AG
11 patentsUS12349429B2Jul 1, 2025
Semiconductor device and method for producing same
MQSEMI AG0 citations61
US11804524B2Oct 31, 2023
Semiconductor device and method for producing same
MQSEMI AG0 citations61
US11588045B2Feb 21, 2023
Fortified trench planar MOS power transistor
MQSEMI AG0 citations51
US11264376B2Mar 1, 2022
Bipolar semiconductor device and method for manufacturing such a semiconductor device
MQSEMI AG0 citations51
US12243933B2Mar 4, 2025
Semiconductor device layouts
MQSEMI AG0 citations50
US12237374B2Feb 25, 2025
Semiconductor device and method for producing same
MQSEMI AG0 citations50
US12211903B2Jan 28, 2025
Semiconductor device and method for designing thereof
MQSEMI AG0 citations50
US11522047B2Dec 6, 2022
Non-punch-through reverse-conducting power semiconductor device and method for producing same
MQSEMI AG0 citations50
US11411076B2Aug 9, 2022
Semiconductor device with fortifying layer
MQSEMI AG0 citations50
US11404542B2Aug 2, 2022
Trench planar MOS cell for transistors
MQSEMI AG0 citations50
US11264475B2Mar 1, 2022
Semiconductor device having a gate electrode formed in a trench structure
MQSEMI AG0 citations50
RAHIMO MUNAF
5 patentsUS8435863B2May 7, 2013
Reverse-conducting semiconductor device and method for manufacturing such a reverse-conducting semiconductor device
RAHIMO MUNAF5 citations67
US8450777B2May 28, 2013
Method for manufacturing a reverse-conducting insulated gate bipolar transistor
RAHIMO MUNAF3 citations61
US8508016B2Aug 13, 2013
Bipolar punch-through semiconductor device and method for manufacturing such a semiconductor device
RAHIMO MUNAF2 citations60
US8450793B2May 28, 2013
Semiconductor module
RAHIMO MUNAF3 citations60
US8617936B2Dec 31, 2013
Reverse-conducting semiconductor device and method for manufacturing such a reverse-conducting semiconductor device
RAHIMO MUNAF4 citations54
ABB POWER GRIDS SWITZERLAND AG
4 patentsUS11043943B2Jun 22, 2021
Switching of paralleled reverse conducting IGBT and wide bandgap switch
ABB POWER GRIDS SWITZERLAND AG6 citations71
US11056408B2Jul 6, 2021
Power semiconductor device with active short circuit failure mode
ABB POWER GRIDS SWITZERLAND AG2 citations69
US11189688B2Nov 30, 2021
Insulated gate power semiconductor device and method for manufacturing such device
ABB POWER GRIDS SWITZERLAND AG1 citations60
US11056582B2Jul 6, 2021
Bidirectional phase controlled thyristor (BiPCT)—a new semiconductor device concept
ABB POWER GRIDS SWITZERLAND AG0 citations51
STORASTA LIUTAURAS
1 patentVOBECKY JAN
1 patentHITACHI ENERGY LTD
1 patentShowing the top 50 of 71 patents by PatentIndex Score.