Inventor
MIYOSHI YOSUKE
JP11 patents
⚠️ This page may combine multiple inventors who share the name “MIYOSHI YOSUKE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NEC CORP
5 patentsUS6100571AAug 8, 2000
Fet having non-overlapping field control electrode between gate and drain
NEC CORP151 citations97
US6462362B1Oct 8, 2002
Heterojunction bipolar transistor having prevention layer between base and emitter
NEC CORP34 citations92
US6325857B1Dec 4, 2001
CVD apparatus
NEC CORP41 citations92
US6225241B1May 1, 2001
Catalytic deposition method for a semiconductor surface passivation film
NEC CORP23 citations92
US5942792AAug 24, 1999
Compound semiconductor device having a multilayer silicon structure between an active region and insulator layer for reducing surface state density at interface
NEC CORP4 citations62
NEC COMPOUND SEMICONDUCTOR
3 patentsUS6483135B1Nov 19, 2002
Field effect transistor
NEC COMPOUND SEMICONDUCTOR93 citations96
US6924201B2Aug 2, 2005
Heterojunction bipolar transistor and method of producing the same
NEC COMPOUND SEMICONDUCTOR8 citations73
US6717192B2Apr 6, 2004
Schottky gate field effect transistor
NEC COMPOUND SEMICONDUCTOR4 citations62
MATSUMURA HIDEKI
2 patentsUS6349669B1Feb 26, 2002
Method and apparatus for depositing a thin film, and semiconductor device having a semiconductor-insulator junction
MATSUMURA HIDEKI21 citations90
US6723664B2Apr 20, 2004
Method and apparatus for depositing a thin film, and semiconductor device having a semiconductor-insulator junction
MATSUMURA HIDEKI6 citations71