Inventor
HUANG CHAO-HSIEN
TW28 patents
⚠️ This page may combine multiple inventors who share the name “HUANG CHAO-HSIEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
22 patentsUS10361278B2Jul 23, 2019
Method of manufacturing a semiconductor device and a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD18 citations94
US10636891B2Apr 28, 2020
Method of manufacturing a semiconductor device and a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US11776850B2Oct 3, 2023
Semiconductor device with reduced loading effect
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11646234B2May 9, 2023
Method for FinFET fabrication and structure thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11264281B2Mar 1, 2022
Semiconductor device with reduced loading effect
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11205706B2Dec 21, 2021
Method of manufacturing a semiconductor device and a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11195759B2Dec 7, 2021
Semiconductor arrangement and method for making
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10861953B2Dec 8, 2020
Air spacers in transistors and methods forming same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10157751B1Dec 18, 2018
Method for manufacturing semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12396245B2Aug 19, 2025
Semiconductor arrangement and method for making
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12396205B2Aug 19, 2025
Semiconductor device having fins and method of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12261085B2Mar 25, 2025
Semiconductor device with reduced loading effect
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12224210B2Feb 11, 2025
Method for FinFet fabrication and structure thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12125897B2Oct 22, 2024
Air spacers in transistors and methods forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12027625B2Jul 2, 2024
Semiconductor device having fins and method of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11728221B2Aug 15, 2023
Air spacers in transistors and methods forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11515423B2Nov 29, 2022
Semiconductor device having fins
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11056393B2Jul 6, 2021
Method for FinFET fabrication and structure thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10964795B2Mar 30, 2021
Air spacers in transistors and methods forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12406941B2Sep 2, 2025
Dielectric slots underneath conductive vias in interconnect structure of semiconductor package and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10755943B2Aug 25, 2020
Method for manufacturing semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10680109B2Jun 9, 2020
CMOS semiconductor device having fins and method of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
IND TECH RES INST
3 patentsASUSTEK COMP INC
2 patentsUS12477063B2Nov 18, 2025
Processing method for priority notification of incoming call and mobile device
ASUSTEK COMP INC0 citations46
US10949164B2Mar 16, 2021
Volume of sound adjustment method, electronic device thereof and non-transitory computer readable storage medium device thereof
ASUSTEK COMP INC0 citations46