Inventor · disambiguated record
Alban Gassenq
Also filed as: GASSENQ ALBAN
3 granted patents·3 citations·filing 2016–2018
53Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE3
Top patents by PatentIndex Score
3 records- 0170US9774167B2Method of production of a semiconducting structure comprising a strained portionCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Sep 26, 2017·2 cites·15 claims
- 0267US10666019B2Semiconductor structure including a suspended membrane containing a central segment of structured thicknessCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted May 26, 2020·1 cites·13 claims
- 0335US9735317B2Method for forming a semiconducting portion by epitaxial growth on a strained portionCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Aug 15, 2017·0 cites·15 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →