Inventor
CALVO VINCENT
FR5 patents
Patents
5 patentsUS9774167B2Sep 26, 2017
Method of production of a semiconducting structure comprising a strained portion
COMMISSARIAT ENERGIE ATOMIQUE2 citations66
US10699902B2Jun 30, 2020
Process for producing a strained layer based on germanium-tin
COMMISSARIAT ENERGIE ATOMIQUE1 citations60
US10666019B2May 26, 2020
Semiconductor structure including a suspended membrane containing a central segment of structured thickness
COMMISSARIAT ENERGIE ATOMIQUE1 citations56
US9502864B2Nov 22, 2016
Device comprising a strained germanium membrane
COMMISSARIAT ENERGIE ATOMIQUE0 citations42
US9735317B2Aug 15, 2017
Method for forming a semiconducting portion by epitaxial growth on a strained portion
COMMISSARIAT ENERGIE ATOMIQUE0 citations35