Inventor · disambiguated record
Kirsten Emilie Moselund
Also filed as: MOSELUND KIRSTEN · MOSELUND KIRSTEN E · MOSELUND KIRSTEN EMILIE
27 granted patents·10 pending applications·31 citations·filing 2005–2023
93Inventor score
Top patents by PatentIndex Score
37 records- 0193US9620360B1Fabrication of semiconductor junctionsIBM·Filed 2015·Granted Apr 11, 2017·10 cites·19 claims
- 0288US9768251B2Method for manufacturing a semiconductor structure, semiconductor structure, and electronic deviceIBM·Filed 2015·Granted Sep 19, 2017·5 cites·12 claims
- 0386US11881533B2Fabrication of a semiconductor device including a quantum dot structureIBM·Filed 2021·Granted Jan 23, 2024·2 cites·15 claims
- 0481US10566764B2Plasmonic quantum well laserIBM·Filed 2018·Granted Feb 18, 2020·2 cites·15 claims
- 0579US10153158B2Semiconductor nanowire fabricationIBM·Filed 2014·Granted Dec 11, 2018·3 cites·14 claims
- 0677US11616344B2Fabrication of semiconductor structuresIBM·Filed 2020·Granted Mar 28, 2023·1 cites·19 claims
- 0777US11056856B2Plasmonic laserIBM·Filed 2019·Granted Jul 6, 2021·2 cites·20 claims
- 0877US10014373B2Fabrication of semiconductor junctionsIBM·Filed 2015·Granted Jul 3, 2018·2 cites·11 claims
- 0972US11183559B2Method for manufacturing a semiconductor structure, semiconductor structure, and electronic deviceIBM·Filed 2017·Granted Nov 23, 2021·1 cites·7 claims
- 1065US10965101B2Plasmonic quantum well laserIBM·Filed 2019·Granted Mar 30, 2021·0 cites·8 claims
- 1165US8772877B2Tunnel field-effect transistorBJOERK MIKAEL T·Filed 2012·Granted Jul 8, 2014·2 cites·23 claims
- 1263US11728448B2Fabrication of a semiconductor device including a quantum dot structureIBM·Filed 2021·Granted Aug 15, 2023·0 cites·19 claims
- 1363US2025151450A1Fabrication of a semiconductor device including a quantum dot structureIBM·Filed 2023·Application pending·0 cites
- 1461US9293467B2Reconfigurable tunnel field-effect transistorsIBM·Filed 2014·Granted Mar 22, 2016·1 cites·19 claims
- 1560US11984493B2Formation of nanosheet transistor channels using epitaxial growthIBM·Filed 2021·Granted May 14, 2024·0 cites·20 claims
- 1658US12426228B2SRAM with staggered stacked FETIBM·Filed 2022·Granted Sep 23, 2025·0 cites·18 claims
- 1758US10559657B2Fabrication of semiconductor junctionsIBM·Filed 2018·Granted Feb 11, 2020·0 cites·11 claims
- 1856US10727051B2Semiconductor nanowire fabricationELPIS TECH INC·Filed 2018·Granted Jul 28, 2020·0 cites·14 claims
- 1955US10411092B2Fabrication of semiconductor junctionsIBM·Filed 2017·Granted Sep 10, 2019·0 cites·6 claims
- 2051US2024096947A1Composite nanosheet tunnel transistorsIBM·Filed 2022·Application pending·0 cites
- 2150US2024196754A1Lateral heterostructure isolated coupled quantum dotsIBM·Filed 2022·Application pending·0 cites
- 2250US2024196767A1Coupled quantum dots with self-aligned gatesIBM·Filed 2022·Application pending·0 cites
- 2348US11756837B2Hybrid nanosheet tunnel-FET/CMOS technologyIBM·Filed 2021·Granted Sep 12, 2023·0 cites·20 claims
- 2448US10958040B1Fabrication of ellipsoidal or semi-ellipsoidal semiconductor structuresIBM·Filed 2019·Granted Mar 23, 2021·0 cites·20 claims
- 2546US12402398B2Co-integrated resonant tunneling diode and field effect transistorIBM·Filed 2022·Granted Aug 26, 2025·0 cites·9 claims
- 2645US11735634B2Complementary 3D nanosheet matrix FETsIBM·Filed 2021·Granted Aug 22, 2023·0 cites·18 claims
- 2743US11621340B2Field-effect transistor structure and fabrication methodIBM·Filed 2019·Granted Apr 4, 2023·0 cites·17 claims
- 2843US11594574B2Piezo-junction deviceIBM·Filed 2018·Granted Feb 28, 2023·0 cites·11 claims
- 2942US2023327008A1Semiconductor device with high-electron mobility transistorIBM·Filed 2022·Application pending·0 cites
- 3041US9703021B1Actively modulated plasmonic devicesIBM·Filed 2015·Granted Jul 11, 2017·0 cites·14 claims
- 3139US11201246B2Field-effect transistor structure and fabrication methodIBM·Filed 2019·Granted Dec 14, 2021·0 cites·17 claims
- 3239US2008030838A1Light Phase ModulatorMOSELUND KIRSTEN·Filed 2005·Application pending·0 cites
- 3337US2009146194A1Semiconductor device and method of manufacturing a semiconductor deviceECOLE POLYTECH·Filed 2008·Application pending·0 cites
- 3437US2013264544A1Nanowire field-effect device with multiple gatesKARG SIEGFRIED F·Filed 2011·Application pending·0 cites
- 3537US2009072279A1Capacitor-less memory and abrupt switch based on hysteresis characteristics in punch-through impact ionization mos transistor (PI-MOS)ECOLE POLYTECH·Filed 2008·Application pending·0 cites
- 3635US11011377B2Method for fabricating a semiconductor deviceIBM·Filed 2019·Granted May 18, 2021·0 cites·17 claims
- 3734US2007298551A1Fabrication of silicon nano wires and gate-all-around MOS devicesECOLE POLYTECH·Filed 2007·Application pending·0 cites
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