Inventor
DOBUZINSKY DAVID
US5 patents
Patents
5 patentsUS5622596AApr 22, 1997
High density selective SiO2 :Si3 N4 etching using a stoichiometrically altered nitride etch stop
IBM23 citations91
US6869542B2Mar 22, 2005
Hard mask integrated etch process for patterning of silicon oxide and other dielectric materials
IBM35 citations89
US6960523B2Nov 1, 2005
Method of reducing erosion of a nitride gate cap layer during reactive ion etch of nitride liner layer for bit line contact of DRAM device
IBM10 citations71
US6806200B2Oct 19, 2004
Method of improving etch uniformity in deep silicon etching
IBM4 citations62
US6890815B2May 10, 2005
Reduced cap layer erosion for borderless contacts
IBM5 citations61