Inventor
YANG FANLING H
US5 patents
Patents
5 patentsUS6303413B1Oct 16, 2001
Method of forming a shallow and deep trench isolation (SDTI) suitable for silicon on insulator (SOI) substrates
MAXIM INTEGRATED PRODUCTS61 citations94
US6686250B1Feb 3, 2004
Method of forming self-aligned bipolar transistor
MAXIM INTEGRATED PRODUCTS38 citations91
US6767798B2Jul 27, 2004
Method of forming self-aligned NPN transistor with raised extrinsic base
MAXIM INTEGRATED PRODUCTS32 citations90
US9673316B1Jun 6, 2017
Vertical semiconductor device having frontside interconnections
MAXIM INTEGRATED PRODUCTS9 citations83
US7026666B2Apr 11, 2006
Self-aligned NPN transistor with raised extrinsic base
MAXIM INTEGRATED PRODUCTS11 citations80