Inventor
HIGUCHI YASUSHI
JP48 patents
⚠️ This page may combine multiple inventors who share the name “HIGUCHI YASUSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI GAS CHEMICAL CO
11 patentsUS5980790ANov 9, 1999
Process for producing a copolymer
MITSUBISHI GAS CHEMICAL CO23 citations92
US5708133AJan 13, 1998
Process for purifying polymer
MITSUBISHI GAS CHEMICAL CO25 citations92
US5804676ASep 8, 1998
Process for preparing polymer
MITSUBISHI GAS CHEMICAL CO23 citations89
US4952665AAug 28, 1990
Process for production of aromatic polyethers with alkali metal carbonate/bicarbonate/fluoride cocatalyst
MITSUBISHI GAS CHEMICAL CO19 citations74
US5599888AFeb 4, 1997
Process for preparing methyl methacrylate polymer
MITSUBISHI GAS CHEMICAL CO9 citations73
US6784317B2Aug 31, 2004
Production of quaternary ammonium salt of hydroxycarboxylic acid and quarternary ammonium salt of inorganic acid
MITSUBISHI GAS CHEMICAL CO12 citations72
US5900491AMay 4, 1999
Preparation process and purification process of cyclic ester
MITSUBISHI GAS CHEMICAL CO11 citations71
US7208631B2Apr 24, 2007
2-alkylcysteinamide or salt thereof, process for producing these, and use of these
MITSUBISHI GAS CHEMICAL CO4 citations62
US5719242AFeb 17, 1998
Process for preparing methyl methacrylate polymer
MITSUBISHI GAS CHEMICAL CO2 citations62
US6967258B2Nov 22, 2005
Production of quaternary ammonium salt of hydroxycarboxylic acid and quaternary ammonium salt of inorganic acid
MITSUBISHI GAS CHEMICAL CO4 citations61
US7470525B2Dec 30, 2008
Process for producing optically active 2-alkycysteine, derivative thereof, and processes for production
MITSUBISHI GAS CHEMICAL CO0 citations40
NIPPON DENSO CO
8 patentsUS5036019AJul 30, 1991
Method of producing a complementary-type semiconductor device
NIPPON DENSO CO35 citations92
US5019526AMay 28, 1991
Method of manufacturing a semiconductor device having a plurality of elements
NIPPON DENSO CO27 citations92
US4924277AMay 8, 1990
MIS transistor device
NIPPON DENSO CO25 citations92
US6337249B1Jan 8, 2002
Semiconductor device and fabrication process thereof
NIPPON DENSO CO22 citations91
US5216272AJun 1, 1993
High withstanding voltage MIS transistor
NIPPON DENSO CO25 citations91
US5342802AAug 30, 1994
Method of manufacturing a complementary MIS transistor
NIPPON DENSO CO16 citations72
US4989064AJan 29, 1991
Aluminum alloy line resistive to stress migration formed in semiconductor integrated circuit
NIPPON DENSO CO17 citations71
US5675167AOct 7, 1997
Enhancement-type semiconductor having reduced leakage current
NIPPON DENSO CO4 citations61
DENSO CORP
7 patentsUS7893458B2Feb 22, 2011
Semiconductor device having lateral MOS transistor and zener diode
DENSO CORP6 citations74
US9231090B2Jan 5, 2016
Trench-gate-type insulated gate bipolar transistor
DENSO CORP4 citations73
US10403745B2Sep 3, 2019
Nitride semiconductor device including a horizontal switching device
DENSO CORP3 citations72
US10109727B2Oct 23, 2018
Semiconductor device
DENSO CORP6 citations71
US8022477B2Sep 20, 2011
Semiconductor apparatus having lateral type MIS transistor
DENSO CORP4 citations63
US10714606B2Jul 14, 2020
Semiconductor device
DENSO CORP0 citations40
US10062747B2Aug 28, 2018
Semiconductor device
DENSO CORP0 citations39
ULVAC CORP
6 patentsUS5180476AJan 19, 1993
Method for producing transparent conductive films
ULVAC CORP53 citations95
US4832810AMay 23, 1989
Co-based alloy sputter target and process of manufacturing the same
ULVAC CORP31 citations92
US6217730B1Apr 17, 2001
Sputtering device
ULVAC CORP27 citations90
US6290826B1Sep 18, 2001
Composite sputtering cathode assembly and sputtering apparatus with such composite sputtering cathode assembly
ULVAC CORP30 citations89
US6413392B1Jul 2, 2002
Sputtering device
ULVAC CORP19 citations80
US5116479AMay 26, 1992
Process for producing transparent conductive film comprising indium oxide
ULVAC CORP16 citations74
IHARA CHEMICAL IND CO
6 patentsUS4822933AApr 18, 1989
Process for producing a chlorohalobenzene
IHARA CHEMICAL IND CO8 citations74
US4390723AJun 28, 1983
Process for producing hydroxyphenyl aliphatic acid derivatives
IHARA CHEMICAL IND CO10 citations69
US4794201ADec 27, 1988
Process for preparation of p-halogeno-monoalkylbenzenes
IHARA CHEMICAL IND CO5 citations66
US4754086AJun 28, 1988
Process for preparation of nuclear halides of monoalkylbenzenes
IHARA CHEMICAL IND CO3 citations63
US4307034ADec 22, 1981
Inert organic solvent dispersion of alkali hydroxide and reaction using the same
IHARA CHEMICAL IND CO5 citations60
US4280958AJul 28, 1981
Process for producing indoline derivative
IHARA CHEMICAL IND CO1 citations51
FLOSFIA INC
4 patentsUS12284822B2Apr 22, 2025
Semiconductor device comprising crystalline oxide semiconductor layer and semiconductor system having the same
FLOSFIA INC1 citations64
US12159940B2Dec 3, 2024
Multilayer structure and semiconductor device
FLOSFIA INC0 citations61
US12289917B2Apr 29, 2025
Semiconductor device
FLOSFIA INC0 citations57
US12107137B2Oct 1, 2024
Semiconductor device
FLOSFIA INC0 citations57
HIGUCHI YASUSHI
2 patentsUS9178050B2Nov 3, 2015
Load-short-circuit-tolerant semiconductor device having trench gates
HIGUCHI YASUSHI2 citations57
US8815737B2Aug 26, 2014
Method for forming NiSi film, method for forming silicide film, method for forming metal film for use in silicide-annealing, apparatus for vacuum processing and film-forming apparatus
HIGUCHI YASUSHI0 citations35