Inventor
KIM HYUNGGON
KR24 patents
⚠️ This page may combine multiple inventors who share the name “KIM HYUNGGON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
22 patentsUS10761969B2Sep 1, 2020
Nonvolatile memory device and operation method thereof
SAMSUNG ELECTRONICS CO LTD4 citations72
US11901021B2Feb 13, 2024
Non-volatile memory device and method for programming the same using multiple program operations under different conditions
SAMSUNG ELECTRONICS CO LTD2 citations71
US12334155B2Jun 17, 2025
Non-volatile memory device, storage device including the same, and read method thereof
SAMSUNG ELECTRONICS CO LTD0 citations62
US11532361B2Dec 20, 2022
Non-volatile memory device, storage device including the same, and read method thereof
SAMSUNG ELECTRONICS CO LTD0 citations62
US12300334B2May 13, 2025
Non-volatile memory device and method for programming a non-volatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations61
US11256605B2Feb 22, 2022
Nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations61
US12279849B2Apr 22, 2025
Method for performing wireless communication by using biosensor and electronic device therefor
SAMSUNG ELECTRONICS CO LTD0 citations60
US12161439B2Dec 10, 2024
Method for performing wireless communication by using biosensor and electronic device therefor
SAMSUNG ELECTRONICS CO LTD0 citations60
US11823753B2Nov 21, 2023
Non-volatile memory device, programming method thereof, and storage device having the same
SAMSUNG ELECTRONICS CO LTD0 citations59
US11626171B2Apr 11, 2023
Non-volatile memory device, programming method thereof, and storage device having the same
SAMSUNG ELECTRONICS CO LTD0 citations59
US12580297B2Mar 17, 2026
Antenna module for vehicle and vehicle including the same
SAMSUNG ELECTRONICS CO LTD1 citations58
US12089408B2Sep 10, 2024
Non-volatile memory device including common source line tapping wire connected to common source line plate by vias on lower metal line and through-hole vias
SAMSUNG ELECTRONICS CO LTD0 citations51
US11636892B2Apr 25, 2023
Method of counting number of cells in nonvolatile memory device and nonvolatile memory device with cell counter performing the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US11562794B2Jan 24, 2023
Storage device performing read operation by using time interleaved sampling page buffer
SAMSUNG ELECTRONICS CO LTD0 citations51
US11848069B2Dec 19, 2023
Page buffer including latches and memory device including the page buffer
SAMSUNG ELECTRONICS CO LTD0 citations49
US11594293B2Feb 28, 2023
Memory device with conditional skip of verify operation during write and operating method thereof
SAMSUNG ELECTRONICS CO LTD0 citations49
US12062402B2Aug 13, 2024
Non-volatile memory device for performing precharge to cell string and program method thereof
SAMSUNG ELECTRONICS CO LTD0 citations47
US12451182B2Oct 21, 2025
Nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations46
US12205646B2Jan 21, 2025
Method of operating a memory device by performing a program operation using a coarse verification voltage and a fine verification voltage and a memory device and a memory system employing the same
SAMSUNG ELECTRONICS CO LTD0 citations46
US12119063B2Oct 15, 2024
Memory device and operation method thereof
SAMSUNG ELECTRONICS CO LTD0 citations44
US11443810B2Sep 13, 2022
Negative level shifters and nonvolatile memory devices including the same
SAMSUNG ELECTRONICS CO LTD0 citations44
US10459667B2Oct 29, 2019
Nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations40