P

Inventor

LEE FANG-WEI

TW32 patents

Patents

32 patents
US11462471B2Oct 4, 2022

Middle-of-line interconnect structure and manufacturing method

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations74
US11646234B2May 9, 2023

Method for FinFET fabrication and structure thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11476365B2Oct 18, 2022

Fin field effect transistor device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11227794B2Jan 18, 2022

Method for making self-aligned barrier for metal vias In-Situ during a metal halide pre-clean and associated interconnect structure

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11031291B2Jun 8, 2021

Semiconductor structure and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11855192B2Dec 26, 2023

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12520558B2Jan 6, 2026

High selectivity etching with germanium-containing gases

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12471344B2Nov 11, 2025

Dry etching of semiconductor structures with fluorine-containing gases

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12402394B2Aug 26, 2025

Semiconductor structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12389619B2Aug 12, 2025

Semiconductor device structure with inner spacer layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12334435B2Jun 17, 2025

Middle-of-line interconnect structure and manufacturing method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12336252B2Jun 17, 2025

Inner spacer formation in multi-gate transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12224210B2Feb 11, 2025

Method for FinFet fabrication and structure thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12198939B2Jan 14, 2025

Technique for semiconductor manufacturing

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12033863B2Jul 9, 2024

Semiconductor fabrication system embedded with effective baking module

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12021125B2Jun 25, 2024

High selectivity etching with germanium-containing gases

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12009294B2Jun 11, 2024

Middle-of-line interconnect structure and manufacturing method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11972974B2Apr 30, 2024

Self-aligned barrier for metal vias

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11973129B2Apr 30, 2024

Semiconductor device structure with inner spacer layer and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11842927B2Dec 12, 2023

Semiconductor structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11830928B2Nov 28, 2023

Inner spacer formation in multi-gate transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11605728B2Mar 14, 2023

Semiconductor device structure with inner spacer layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11373878B2Jun 28, 2022

Technique for semiconductor manufacturing

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11222794B2Jan 11, 2022

Semiconductor fabrication system embedded with effective baking module

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11152491B2Oct 19, 2021

Method for forming semiconductor device structure with inner spacer layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11107904B2Aug 31, 2021

Inner spacer formation in multi-gate transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11056393B2Jul 6, 2021

Method for FinFET fabrication and structure thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12218219B2Feb 4, 2025

Spacer structure for semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12376337B2Jul 29, 2025

Air inner spacers

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11201243B2Dec 14, 2021

Nanowire stack GAA device and methods for producing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10847633B2Nov 24, 2020

Method for forming semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12266538B2Apr 1, 2025

Method for manufacturing semiconductor device using etchant composition having high etching selectivity

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations47