Inventor
HUA ZI QUN
CN16 patents
Patents
16 patentsUS10748851B1Aug 18, 2020
Hybrid bonding using dummy bonding contacts and dummy interconnects
YANGTZE MEMORY TECH CO LTD6 citations83
US10784225B2Sep 22, 2020
Bonded semiconductor structures having bonding contacts made of indiffusible conductive materials and methods for forming the same
YANGTZE MEMORY TECH CO LTD4 citations73
US11462503B2Oct 4, 2022
Hybrid bonding using dummy bonding contacts
YANGTZE MEMORY TECH CO LTD2 citations72
US11205619B2Dec 21, 2021
Hybrid bonding using dummy bonding contacts and dummy interconnects
YANGTZE MEMORY TECH CO LTD2 citations72
US11049834B2Jun 29, 2021
Hybrid bonding using dummy bonding contacts
YANGTZE MEMORY TECH CO LTD3 citations72
US10840125B2Nov 17, 2020
Memory structure and method for forming the same
YANGTZE MEMORY TECH CO LTD6 citations72
US10497708B1Dec 3, 2019
Memory structure and forming method thereof
YANGTZE MEMORY TECH CO LTD4 citations71
US10727056B2Jul 28, 2020
Method and structure for cutting dense line patterns using self-aligned double patterning
YANGTZE MEMORY TECH CO LTD3 citations70
US12074105B2Aug 27, 2024
Self-aligned contacts in three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11664309B2May 30, 2023
Self-aligned contacts in three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11552012B2Jan 10, 2023
Self-aligned contacts in three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11430756B2Aug 30, 2022
Bonded semiconductor structures having bonding contacts made of indiffusible conductive materials and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11710730B2Jul 25, 2023
Fabricating method of semiconductor device with exposed input/output pad in recess
YANGTZE MEMORY TECH CO LTD0 citations60
US11430775B2Aug 30, 2022
Semiconductor device with exposed input/output pad in recess
YANGTZE MEMORY TECH CO LTD0 citations60
US12347684B2Jul 1, 2025
Method and structure for cutting dense line patterns using self-aligned double patterning
YANGTZE MEMORY TECH CO LTD0 citations59
US11251043B2Feb 15, 2022
Method and structure for cutting dense line patterns using self-aligned double patterning
YANGTZE MEMORY TECH CO LTD0 citations59