Inventor

TSAI JUNG-HUI

TW6 patents

⚠️ This page may combine multiple inventors who share the name “TSAI JUNG-HUI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NAT SCIENCE COUNCIL

2 patents

US6465815B2Oct 15, 2002

High-breakdown voltage heterostructure field-effect transistor for high temperature operations

NAT SCIENCE COUNCIL10 citations72

US5977572ANov 2, 1999

Low offset voltage AlInAs/GaInAs heterostructure-confinement bipolar transistor

NAT SCIENCE COUNCIL5 citations59

NAT KAOHSIUNG NORMAL UNIVERSIT

2 patents

US6800880B1Oct 5, 2004

Heterojunction bipolar transistors with extremely low offset voltage and high current gain

NAT KAOHSIUNG NORMAL UNIVERSIT8 citations68

US6943386B2Sep 13, 2005

Pseudomorphic high electron mobility field effect transistor with high device linearity

NAT KAOHSIUNG NORMAL UNIVERSIT5 citations57

NAT SCIENCE COUNCIL REPUBLIC CHINA

1 patent

US5789771AAug 4, 1998

Camel-gate field-effect transistor with multiple modulation-doped channels

NAT SCIENCE COUNCIL REPUBLIC CHINA6 citations59

NAT SCIENCE COUNSEL OF REPUBLI

1 patent

US5698862ADec 16, 1997

Structure of the heterostructure-emitter and heterostructure-base transistor (HEHBT)

NAT SCIENCE COUNSEL OF REPUBLI1 citations42