P

Inventor

ESMARK KAI

DE30 patents
⚠️ This page may combine multiple inventors who share the name “ESMARK KAI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

23 patents
US9812438B2Nov 7, 2017

Avalanche diode having an enhanced defect concentration level and method of making the same

INFINEON TECHNOLOGIES AG39 citations97
US9257523B2Feb 9, 2016

Avalanche diode having an enhanced defect concentration level and method of making the same

INFINEON TECHNOLOGIES AG41 citations97
US6905892B2Jun 14, 2005

Operating method for a semiconductor component

INFINEON TECHNOLOGIES AG102 citations97
US7800128B2Sep 21, 2010

Semiconductor ESD device and method of making same

INFINEON TECHNOLOGIES AG19 citations92
US8350355B2Jan 8, 2013

Electrostatic discharge devices

INFINEON TECHNOLOGIES AG13 citations84
US6930501B2Aug 16, 2005

Method for determining an ESD/latch-up strength of an integrated circuit

INFINEON TECHNOLOGIES AG18 citations82
US8956924B2Feb 17, 2015

Method of forming a semiconductor device including a silicon controlled rectifier

INFINEON TECHNOLOGIES AG5 citations79
US12244137B2Mar 4, 2025

ESD protection for multi-die integrated circuits (ICs) including integrated passive devices

INFINEON TECHNOLOGIES AG2 citations74
US7732834B2Jun 8, 2010

Semiconductor ESD device and method of making same

INFINEON TECHNOLOGIES AG7 citations74
US7087938B2Aug 8, 2006

ESD protective circuit with collector-current-controlled triggering for a monolithically integrated circuit

INFINEON TECHNOLOGIES AG10 citations73
US7985983B2Jul 26, 2011

Semiconductor ESD device and method of making same

INFINEON TECHNOLOGIES AG4 citations63
US9263430B2Feb 16, 2016

Semiconductor ESD device and method of making same

INFINEON TECHNOLOGIES AG1 citations62
US7359169B2Apr 15, 2008

Circuit for protecting integrated circuits against electrostatic discharges

INFINEON TECHNOLOGIES AG4 citations62
US7279726B2Oct 9, 2007

ESD protection device

INFINEON TECHNOLOGIES AG4 citations62
US7009404B2Mar 7, 2006

Method and device for testing the ESD resistance of a semiconductor component

INFINEON TECHNOLOGIES AG6 citations62
US7202527B2Apr 10, 2007

MOS transistor and ESD protective device each having a settable voltage ratio of the lateral breakdown voltage to the vertical breakdown voltage

INFINEON TECHNOLOGIES AG2 citations60
US6884688B2Apr 26, 2005

Method for producing a MOS transistor and MOS transistor

INFINEON TECHNOLOGIES AG3 citations60
US7694247B2Apr 6, 2010

Identification of ESD and latch-up weak points in an integrated circuit

INFINEON TECHNOLOGIES AG6 citations58
US10756081B2Aug 25, 2020

Avalanche diode having an enhanced defect concentration level and method of making the same

INFINEON TECHNOLOGIES AG0 citations52
US7888701B2Feb 15, 2011

Integrated circuit arrangement with Shockley diode or thyristor and method for production and use of a thyristor

INFINEON TECHNOLOGIES AG0 citations52
US7679103B2Mar 16, 2010

Integrated circuit arrangement with shockley diode or thyristor and method for production and use of a thyristor

INFINEON TECHNOLOGIES AG0 citations52
US11121126B2Sep 14, 2021

Silicon controlled rectifier and manufacturing method therefor

INFINEON TECHNOLOGIES AG0 citations50
US9899367B2Feb 20, 2018

Integrated circuit including lateral insulated gate field effect transistor

INFINEON TECHNOLOGIES AG0 citations50

DOMANSKI KRZYSZTOF

2 patents

ESMARK KAI

2 patents

SCHNEIDER JENS

1 patent

MUELLER KARL-HEINZ

1 patent

GLASER ULRICH

1 patent