Inventor
WENDEL MARTIN
DE14 patents
⚠️ This page may combine multiple inventors who share the name “WENDEL MARTIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
12 patentsUS9812438B2Nov 7, 2017
Avalanche diode having an enhanced defect concentration level and method of making the same
INFINEON TECHNOLOGIES AG39 citations97
US9257523B2Feb 9, 2016
Avalanche diode having an enhanced defect concentration level and method of making the same
INFINEON TECHNOLOGIES AG41 citations97
US6905892B2Jun 14, 2005
Operating method for a semiconductor component
INFINEON TECHNOLOGIES AG102 citations97
US7875933B2Jan 25, 2011
Lateral bipolar transistor with additional ESD implant
INFINEON TECHNOLOGIES AG14 citations84
US7709896B2May 4, 2010
ESD protection device and method
INFINEON TECHNOLOGIES AG15 citations83
US6930501B2Aug 16, 2005
Method for determining an ESD/latch-up strength of an integrated circuit
INFINEON TECHNOLOGIES AG18 citations82
US7087938B2Aug 8, 2006
ESD protective circuit with collector-current-controlled triggering for a monolithically integrated circuit
INFINEON TECHNOLOGIES AG10 citations73
US6559503B2May 6, 2003
Transistor with ESD protection
INFINEON TECHNOLOGIES AG7 citations71
US7359169B2Apr 15, 2008
Circuit for protecting integrated circuits against electrostatic discharges
INFINEON TECHNOLOGIES AG4 citations62
US7009404B2Mar 7, 2006
Method and device for testing the ESD resistance of a semiconductor component
INFINEON TECHNOLOGIES AG6 citations62
US10756081B2Aug 25, 2020
Avalanche diode having an enhanced defect concentration level and method of making the same
INFINEON TECHNOLOGIES AG0 citations52
US8043934B2Oct 25, 2011
Methods of use and formation of a lateral bipolar transistor with counter-doped implant regions under collector and/or emitter regions
INFINEON TECHNOLOGIES AG0 citations52