Inventor
JOHNSON ROBB ALLEN
US6 patents
Patents
6 patentsUS6426265B1Jul 30, 2002
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
IBM25 citations92
US6812545B2Nov 2, 2004
Epitaxial base bipolar transistor with raised extrinsic base
IBM28 citations90
US6617220B2Sep 9, 2003
Method for fabricating an epitaxial base bipolar transistor with raised extrinsic base
IBM15 citations82
US6815802B2Nov 9, 2004
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
IBM5 citations71
US7713829B2May 11, 2010
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
IBM1 citations62
US7173274B2Feb 6, 2007
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
IBM0 citations51