Inventor
SCHONENBERG KATHRYN TURNER
US6 patents
Patents
6 patentsUS6426265B1Jul 30, 2002
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
IBM25 citations92
US6864560B2Mar 8, 2005
Bipolar transistor structure with a shallow isolation extension region providing reduced parasitic capacitance
IBM41 citations89
US6815802B2Nov 9, 2004
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
IBM5 citations71
US7713829B2May 11, 2010
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
IBM1 citations62
US7173274B2Feb 6, 2007
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
IBM0 citations51
US8357953B2Jan 22, 2013
Bipolar transistor with low resistance base contact
IBM0 citations50