Inventor
FURUKAWA TOSHIJARU
US4 patents
Patents
4 patentsUS7256415B2Aug 14, 2007
Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells
IBM49 citations95
US7378678B2May 27, 2008
Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells
IBM3 citations62
US7834384B2Nov 16, 2010
Simultaneous conditioning of a plurality of memory cells through series resistors
IBM0 citations51
US7541608B2Jun 2, 2009
Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells
IBM0 citations51