Inventor

HAN LICHENG

SG2 patents

Patents

2 patents

US6730591B2May 4, 2004

Method of using silicon rich carbide as a barrier material for fluorinated materials

CHARTERED SEMICONDUCTOR MFG6 citations71

US6429129B1Aug 6, 2002

Method of using silicon rich carbide as a barrier material for fluorinated materials

CHARTERED SEMICONDUCTOR MFG11 citations71