Inventor

LU NICKY C

US19 patents

⚠️ This page may combine multiple inventors who share the name “LU NICKY C”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LU NICKY C

IBM

Method of fabricating cross-point lightly-doped drain-source trench transistor

Trench-capacitor-one-transistor storage cell and array for dynamic random access memories

Boost clock circuit for driving redundant wordlines and sample wordlines

Integrated trench-transistor structure and fabrication process

High density memory cell structure having a vertical trench transistor self-aligned with a vertical trench capacitor and fabrication methods therefor

High density vertical trench transistor and capacitor memory cell structure and fabrication method therefor

Fabrication method for forming a self-aligned contact window and connection in an epitaxial layer and device structures employing the method

Dynamic ram cell with MOS trench capacitor in CMOS

Dynamic memory device having a single-crystal transistor on a trench capacitor structure and a fabrication method therefor

Silicide bridge contact process

Wordline voltage boosting circuits for complementary MOSFET dynamic memories

Complementary metal-oxide-semiconductor transistor and one-capacitor dynamic-random-access memory cell and fabrication process therefor

Complementary metal-oxide-semiconductor transistor and one-capacitor dynamic-random-access memory cell

Dynamic ram having multiplexed twin I/O line pairs

Boosting word-line clock circuit for semiconductor memory

ETRON TECHNOLOGY INC

High performance DRAM structure employing multiple thickness gate oxide

High performance DRAM structure employing multiple thickness gate oxide

High performance DRAM structure employing multiple thickness gate oxide

IND TECH RES INST

Method of manufacturing low leakage and long retention time DRAM