Inventor
KATOH TAKAYUKI
JP54 patents
⚠️ This page may combine multiple inventors who share the name “KATOH TAKAYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
18 patentsUS5294897AMar 15, 1994
Microwave IC package
MITSUBISHI ELECTRIC CORP373 citations99
US5418329AMay 23, 1995
High frequency IC package
MITSUBISHI ELECTRIC CORP73 citations96
US5408188AApr 18, 1995
High frequency wafer probe including open end waveguide
MITSUBISHI ELECTRIC CORP94 citations96
US5235208AAug 10, 1993
Package for microwave integrated circuit
MITSUBISHI ELECTRIC CORP79 citations96
US5528074AJun 18, 1996
Microwave semiconductor device and integrated circuit including microwave semiconductor devices
MITSUBISHI ELECTRIC CORP86 citations94
US6535090B1Mar 18, 2003
Compact high-frequency circuit device
MITSUBISHI ELECTRIC CORP28 citations92
US5349317ASep 20, 1994
High frequency signal transmission tape
MITSUBISHI ELECTRIC CORP33 citations92
US6617864B2Sep 9, 2003
High frequency probe for examining electric characteristics of devices
MITSUBISHI ELECTRIC CORP28 citations90
US5808519ASep 15, 1998
Hermetically sealed millimeter-wave device
MITSUBISHI ELECTRIC CORP40 citations89
US6555907B2Apr 29, 2003
High-frequency integrated circuit and high-frequency circuit device using the same
MITSUBISHI ELECTRIC CORP18 citations84
US5357121AOct 18, 1994
Optoelectronic integrated circuit
MITSUBISHI ELECTRIC CORP17 citations74
US5157357AOct 20, 1992
Monolithic microwave ic oscillator
MITSUBISHI ELECTRIC CORP10 citations74
US4926234AMay 15, 1990
Semiconductor device operating in high frequency range
MITSUBISHI ELECTRIC CORP12 citations74
US5801528ASep 1, 1998
Semiconductor element evaluating apparatus
MITSUBISHI ELECTRIC CORP7 citations73
US7876119B2Jan 25, 2011
Method of inspecting semiconductor device chip patterns on a wafer
MITSUBISHI ELECTRIC CORP2 citations63
US5258646ANov 2, 1993
Package for microwave IC
MITSUBISHI ELECTRIC CORP6 citations63
US5051810ASep 24, 1991
Semiconductor device operating in high frequency range
MITSUBISHI ELECTRIC CORP3 citations63
US5010019AApr 23, 1991
Method of making a semiconductor device operating in high frequency range
MITSUBISHI ELECTRIC CORP4 citations63
FUJI PHOTO FILM CO LTD
12 patentsUS6490309B1Dec 3, 2002
Laser-diode-pumped laser apparatus in which Pr3+-doped laser medium is pumped with GaN-based compound laser diode
FUJI PHOTO FILM CO LTD73 citations96
US5198679AMar 30, 1993
Phosphor and image storage panel
FUJI PHOTO FILM CO LTD94 citations96
US5049762ASep 17, 1991
Optical wavelength converter system
FUJI PHOTO FILM CO LTD22 citations93
US7154930B2Dec 26, 2006
Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ is excited with GaN-based compound laser diode
FUJI PHOTO FILM CO LTD4 citations74
US6816532B2Nov 9, 2004
Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of ho3+, sm3+, eu3+, dy3+, er3+, and tb3+is excited with gan-based compound laser diode
FUJI PHOTO FILM CO LTD8 citations74
US4909596AMar 20, 1990
Optical wavelength converter module
FUJI PHOTO FILM CO LTD10 citations74
US4909595AMar 20, 1990
Optical wavelength conversion method and optical wavelength converter module
FUJI PHOTO FILM CO LTD17 citations74
US6558465B1May 6, 2003
Single-crystal optical element having flat light-transmitting end surface inclined relative to cleavage
FUJI PHOTO FILM CO LTD2 citations63
US4871474AOct 3, 1989
Phosphor
FUJI PHOTO FILM CO LTD4 citations63
US4873440AOct 10, 1989
Electron microscope image output method and apparatus
FUJI PHOTO FILM CO LTD5 citations62
US4810886AMar 7, 1989
Electron microscope
FUJI PHOTO FILM CO LTD5 citations62
US5418808AMay 23, 1995
Solid state laser
FUJI PHOTO FILM CO LTD3 citations61
LENOVO SINGAPORE PTE LTD
6 patentsUS7412306B2Aug 12, 2008
Thermal management of a personal computing apparatus
LENOVO SINGAPORE PTE LTD48 citations96
US8031466B2Oct 4, 2011
Thermal management of a personal computing apparatus
LENOVO SINGAPORE PTE LTD6 citations71
US7953031B2May 31, 2011
Apparatus and methods for performing wireless communication and detection
LENOVO SINGAPORE PTE LTD2 citations63
US7315955B2Jan 1, 2008
Circuit for turning off charging function to a battery of a system based on information set by user during the system in power-off state
LENOVO SINGAPORE PTE LTD6 citations61
US7181634B2Feb 20, 2007
Apparatus for switching between a combination of operating modes such that the power consumed is reduced relative to the time of switching
LENOVO SINGAPORE PTE LTD2 citations60
US7167992B2Jan 23, 2007
Method for controlling the switching of operating modes of an information processor according to the time of switching of the operating modes
LENOVO SINGAPORE PTE LTD5 citations60
FUJIFILM CORP
5 patentsUS7356065B2Apr 8, 2008
Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ is excited with GaN-based compound laser diode
FUJIFILM CORP1 citations63
US7418023B2Aug 26, 2008
Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho3+, SM3+, EU3+, DY3+, ER3+ and TB3+ is excited with GaN-based compound laser diode
FUJIFILM CORP0 citations52
US7411990B2Aug 12, 2008
Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ is excited with GaN-based compound laser diode
FUJIFILM CORP0 citations52
US7403554B2Jul 22, 2008
Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ is excited with GaN-based compound laser diode
FUJIFILM CORP0 citations52
US7362789B2Apr 22, 2008
Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ is excited with GaN-based compound laser diode
FUJIFILM CORP0 citations52
IBM
4 patentsUS6516374B1Feb 4, 2003
Method for docking/undocking a portable computer to/from an expansion unit
IBM34 citations91
US6493783B1Dec 10, 2002
Undocking method for multilayer-dock structure constituted by docking plurality of expansion units to a portable PC
IBM20 citations90
US7502952B2Mar 10, 2009
Method and apparatus for thermal control of electronic components
IBM12 citations83
US7343505B2Mar 11, 2008
Method and apparatus for thermal control of electronic components
IBM14 citations83
KONISHIROKU PHOTO IND
2 patentsLENOVO SINGAPORE0 PTE LTD
1 patentTEIJIN LTD
1 patentUNIV TOKYO
1 patentShowing the top 50 of 54 patents by PatentIndex Score.