Inventor · disambiguated record
Papu D. Maniar
Also filed as: MANIAR PAPU · MANIAR PAPU D
35 granted patents·5 pending applications·3,215 citations·filing 1991–2012
98Inventor score
Top patents by PatentIndex Score
40 records- 0198US5324683AMethod of forming a semiconductor structure having an air regionMOTOROLA INC·Filed 1993·Granted Jun 28, 1994·692 cites·36 claims
- 0297US8363020B2Methods and apparatus for pressure-based manipulation of content on a touch screenSYMBOL TECHNOLOGIES INC·Filed 2009·Granted Jan 29, 2013·161 cites·20 claims
- 0396US9018030B2Transparent force sensor and method of fabricationLI HAO·Filed 2010·Granted Apr 28, 2015·62 cites·9 claims
- 0495US5578523AMethod for forming inlaid interconnects in a semiconductor deviceMOTOROLA INC·Filed 1995·Granted Nov 26, 1996·201 cites·21 claims
- 0595US5510645ASemiconductor structure having an air region and method of forming the semiconductor structureMOTOROLA INC·Filed 1995·Granted Apr 23, 1996·238 cites·11 claims
- 0695US5185689ACapacitor having a ruthenate electrode and method of formationMOTOROLA INC·Filed 1992·Granted Feb 9, 1993·122 cites·29 claims
- 0794US5510651ASemiconductor device having a reducing/oxidizing conductive materialMOTOROLA INC·Filed 1994·Granted Apr 23, 1996·169 cites·6 claims
- 0892US6344413B1Method for forming a semiconductor deviceMOTOROLA INC·Filed 1998·Granted Feb 5, 2002·121 cites·35 claims
- 0992US5534462AMethod for forming a plug and semiconductor device having the sameMOTOROLA INC·Filed 1995·Granted Jul 9, 1996·135 cites·25 claims
- 1089US5696394ACapacitor having a metal-oxide dielectricMOTOROLA INC·Filed 1996·Granted Dec 9, 1997·63 cites·27 claims
- 1189US5525191AProcess for polishing a semiconductor substrateMOTOROLA INC·Filed 1994·Granted Jun 11, 1996·58 cites·13 claims
- 1288US5677231AMethod for providing trench isolationMOTOROLA INC·Filed 1996·Granted Oct 14, 1997·66 cites·14 claims
- 1388US5652176AMethod for providing trench isolation and borderless contactMOTOROLA INC·Filed 1995·Granted Jul 29, 1997·67 cites·13 claims
- 1488US5439840AMethod of forming a nonvolatile random access memory capacitor cell having a metal-oxide dielectricMOTOROLA INC·Filed 1993·Granted Aug 8, 1995·59 cites·11 claims
- 1588US5258093AProcss for fabricating a ferroelectric capacitor in a semiconductor deviceMOTOROLA INC·Filed 1992·Granted Nov 2, 1993·106 cites·13 claims
- 1687US5337207AHigh-permittivity dielectric capacitor for use in a semiconductor device and process for making the sameMOTOROLA INC·Filed 1992·Granted Aug 9, 1994·72 cites·20 claims
- 1786US5702981AMethod for forming a via in a semiconductor deviceFiled 1995·Granted Dec 30, 1997·105 cites·20 claims
- 1886US5407855AProcess for forming a semiconductor device having a reducing/oxidizing conductive materialMOTOROLA INC·Filed 1993·Granted Apr 18, 1995·78 cites·17 claims
- 1986US5356833AProcess for forming an intermetallic member on a semiconductor substrateMOTOROLA INC·Filed 1993·Granted Oct 18, 1994·69 cites·20 claims
- 2082US5254217AMethod for fabricating a semiconductor device having a conductive metal oxideMOTOROLA INC·Filed 1992·Granted Oct 19, 1993·75 cites·15 claims
- 2181US5583068AProcess for forming a capacitor having a metal-oxide dielectricMOTOROLA INC·Filed 1995·Granted Dec 10, 1996·38 cites·10 claims
- 2281US5525542AMethod for making a semiconductor device having anti-reflective coatingMOTOROLA INC·Filed 1995·Granted Jun 11, 1996·65 cites·17 claims
- 2378US5432731AFerroelectric memory cell and method of sensing and writing the polarization state thereofMOTOROLA INC·Filed 1993·Granted Jul 11, 1995·40 cites·8 claims
- 2477US5605865AMethod for forming self-aligned silicide in a semiconductor device using vapor phase reactionMOTOROLA INC·Filed 1995·Granted Feb 25, 1997·39 cites·16 claims
- 2577US5391393AMethod for making a semiconductor device having an anhydrous ferroelectric thin-film in an oxygen-containing ambientMOTOROLA INC·Filed 1993·Granted Feb 21, 1995·52 cites·17 claims
- 2673US5271955AMethod for making a semiconductor device having an anhydrous ferroelectric thin filmMOTOROLA INC·Filed 1992·Granted Dec 21, 1993·44 cites·21 claims
- 2771US5384285AProcess for fabricating a silicide layer in a semiconductor deviceMOTOROLA INC·Filed 1993·Granted Jan 24, 1995·31 cites·14 claims
- 2871US5186745ATeos based spin-on-glass and processes for making and using the sameMOTOROLA INC·Filed 1991·Granted Feb 16, 1993·40 cites·9 claims
- 2969US5190889AMethod of forming trench isolation structure with germanium silicate fillingMOTOROLA INC·Filed 1991·Granted Mar 2, 1993·45 cites·19 claims
- 3067US5254873ATrench structure having a germanium silicate regionMOTOROLA INC·Filed 1992·Granted Oct 19, 1993·42 cites·18 claims
- 3163US6127257AMethod of making a contact structureMOTOROLA INC·Filed 1993·Granted Oct 3, 2000·33 cites·14 claims
- 3252US7320931B2Interfacial layer for use with high k dielectric materialsFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jan 22, 2008·3 cites·18 claims
- 3351US5817582AProcess for making a semiconductor device having a TEOS based spin-on-glassMOTOROLA INC·Filed 1992·Granted Oct 6, 1998·17 cites·3 claims
- 3448US2009123699A1Viewable surface having unnoticeable smudgesMOTOROLA INC·Filed 2007·Application pending·0 cites
- 3547US9110280B2Viewable surface having unnoticeable smudgesMANIAR PAPU D·Filed 2012·Granted Aug 18, 2015·0 cites·10 claims
- 3647US2009237374A1Transparent pressure sensor and method for usingMOTOROLA INC·Filed 2008·Application pending·0 cites
- 3741US2013147850A1Method and device for force sensing gesture recognitionLI HAO·Filed 2011·Application pending·0 cites
- 3838US2004012037A1Hetero-integration of semiconductor materials on siliconMOTOROLA INC·Filed 2002·Application pending·0 cites
- 3935US5910680AGermanium silicate spin on glass semiconductor device and methods of spin on glass synthesis and useMOTOROLA INC·Filed 1994·Granted Jun 8, 1999·7 cites·20 claims
- 4035US2007054474A1Crack-free III-V epitaxy on germanium on insulator (GOI) substratesTRACY CLARENCE J·Filed 2005·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →