Inventor
RAJEEVAKUMAR THEKKEMADATHIL V
US14 patents
⚠️ This page may combine multiple inventors who share the name “RAJEEVAKUMAR THEKKEMADATHIL V”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
12 patentsUS5593912AJan 14, 1997
SOI trench DRAM cell for 256 MB DRAM and beyond
IBM312 citations98
US5065273ANov 12, 1991
High capacity DRAM trench capacitor and methods of fabricating same
IBM132 citations97
US5482883AJan 9, 1996
Method for fabricating low leakage substrate plate trench DRAM cells and devices formed thereby
IBM46 citations95
US5529944AJun 25, 1996
Method of making cross point four square folded bitline trench DRAM cell
IBM36 citations92
US5489544AFeb 6, 1996
Method for making a high capacitance multi-level storage node for high density TFT load SRAMS with low soft error rates
IBM28 citations92
US5426324AJun 20, 1995
High capacitance multi-level storage node for high density TFT load SRAMs with low soft error rates
IBM30 citations92
US5406515AApr 11, 1995
Method for fabricating low leakage substrate plate trench DRAM cells and devices formed thereby
IBM22 citations92
US7531886B2May 12, 2009
MOSFET fuse programmed by electromigration
IBM9 citations83
US4618784AOct 21, 1986
High-performance, high-density CMOS decoder/driver circuit
IBM21 citations82
US4638462AJan 20, 1987
Self-timed precharge circuit
IBM19 citations73
US4361768ANov 30, 1982
Superconducting soliton devices
IBM15 citations73
US6710643B1Mar 23, 2004
Circuit technique to eliminate large on-chip decoupling capacitors
IBM3 citations62