Inventor
BAUER FRIEDHELM
CH24 patents
⚠️ This page may combine multiple inventors who share the name “BAUER FRIEDHELM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ASEA BROWN BOVERI
15 patentsUS5105244AApr 14, 1992
Gate turn-off power semiconductor component
ASEA BROWN BOVERI47 citations92
US5040042AAug 13, 1991
Bidirectional semiconductor component that can be turned off
ASEA BROWN BOVERI49 citations92
US4985741AJan 15, 1991
MOS-controlled bipolar power semiconductor component
ASEA BROWN BOVERI43 citations92
US4975782ADec 4, 1990
Field effect controlled, bipolar power semiconductor component with silicide layer
ASEA BROWN BOVERI30 citations92
US5668385ASep 16, 1997
Power semiconductor component with transparent emitter and stop layer
ASEA BROWN BOVERI40 citations90
US5698867ADec 16, 1997
Turn-off, MOS-controlled, power semiconductor component
ASEA BROWN BOVERI19 citations83
US5661315AAug 26, 1997
Controllable power semiconductor component
ASEA BROWN BOVERI8 citations74
US5619047AApr 8, 1997
Semiconductor diode in which electrons are injected into a reverse current
ASEA BROWN BOVERI14 citations73
US5144400ASep 1, 1992
Power semiconductor device with switch-off facility
ASEA BROWN BOVERI15 citations73
US4967255AOct 30, 1990
Controllable power semiconductor component
ASEA BROWN BOVERI11 citations73
US4954869ASep 4, 1990
MOS-controlled thyristor (MCT)
ASEA BROWN BOVERI15 citations73
US5710445AJan 20, 1998
Gate turn-off thyristor for high blocking voltage and small component thickness
ASEA BROWN BOVERI9 citations70
US5616938AApr 1, 1997
MOS-controlled power semiconductor component for high voltages
ASEA BROWN BOVERI6 citations62
US5349213ASep 20, 1994
Turn-off power semiconductor device
ASEA BROWN BOVERI6 citations62
US5243201ASep 7, 1993
Mos-controlled thyristor mct
ASEA BROWN BOVERI5 citations62
ABB SCHWEIZ AG
4 patentsUS6576936B1Jun 10, 2003
Bipolar transistor with an insulated gate electrode
ABB SCHWEIZ AG6 citations62
US9659927B2May 23, 2017
Junction barrier Schottky rectifier
ABB SCHWEIZ AG0 citations41
US10629677B2Apr 21, 2020
Area efficient floating field ring termination
ABB SCHWEIZ AG0 citations40
US10566463B2Feb 18, 2020
Power semiconductor device with floating field ring termination
ABB SCHWEIZ AG0 citations40