P

Inventor

HWANG HONG-SUN

KR48 patents
⚠️ This page may combine multiple inventors who share the name “HWANG HONG-SUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

23 patents
US5867442AFeb 2, 1999

Variable output voltage booster circuits and methods

SAMSUNG ELECTRONICS CO LTD47 citations93
US5808955ASep 15, 1998

Integrated circuit memory devices including sub-word line drivers and related methods

SAMSUNG ELECTRONICS CO LTD26 citations93
US5757714AMay 26, 1998

Semiconductor memory device with on-chip boosted power supply voltage generator

SAMSUNG ELECTRONICS CO LTD36 citations93
US5130580AJul 14, 1992

Sense amplifier driving circuit employing current mirror for semiconductor memory device

SAMSUNG ELECTRONICS CO LTD34 citations92
US6362995B1Mar 26, 2002

Arrangements of interface logic, memory core, data shift and pad blocks for integrated circuit memory devices

SAMSUNG ELECTRONICS CO LTD30 citations86
US9653141B2May 16, 2017

Method of operating a volatile memory device and a memory controller

SAMSUNG ELECTRONICS CO LTD10 citations84
US9335951B2May 10, 2016

Memory device for reducing a write fail, a system including the same, and a method thereof

SAMSUNG ELECTRONICS CO LTD9 citations84
US8917564B2Dec 23, 2014

Three-dimensional semiconductor memory device having compensating data skewing according to interlayer timing delay and method of de-skewing data therein

SAMSUNG ELECTRONICS CO LTD5 citations84
US8730710B2May 20, 2014

Semiconductor memory device having stacked structure including resistor-switched based logic circuit and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD8 citations84
US8355291B2Jan 15, 2013

Resistive memory device and method of controlling refresh operation of resistive memory device

SAMSUNG ELECTRONICS CO LTD15 citations84
US7224596B2May 29, 2007

Apparatus and method for repairing semiconductor memory device

SAMSUNG ELECTRONICS CO LTD12 citations79
US7382668B2Jun 3, 2008

Full-stress testable memory device having an open bit line architecture and method of testing the same

SAMSUNG ELECTRONICS CO LTD7 citations74
US6154404ANov 28, 2000

Integrated circuit memory devices having sense amplifier driver circuits therein that improve writing efficiency

SAMSUNG ELECTRONICS CO LTD14 citations74
US4948993AAug 14, 1990

Distributed sensing control circuit for a sense amplifier of the memory device

SAMSUNG ELECTRONICS CO LTD18 citations74
US9042194B2May 26, 2015

Refresh method, refresh address generator, volatile memory device including the same

SAMSUNG ELECTRONICS CO LTD3 citations63
US8935467B2Jan 13, 2015

Memory system, and a method of controlling an operation thereof

SAMSUNG ELECTRONICS CO LTD3 citations63
US7586804B2Sep 8, 2009

Memory core, memory device including a memory core, and method thereof testing a memory core

SAMSUNG ELECTRONICS CO LTD6 citations63
US6194931B1Feb 27, 2001

Circuit for generating backbias voltage corresponding to frequency and method thereof for use in semiconductor memory device

SAMSUNG ELECTRONICS CO LTD6 citations63
US5796668AAug 18, 1998

Integrated circuit memory devices having reduced write cycle times and related methods

SAMSUNG ELECTRONICS CO LTD3 citations63
US5214600AMay 25, 1993

Semiconductor memory array having interdigitated bit-line structure

SAMSUNG ELECTRONICS CO LTD5 citations61
US9076539B2Jul 7, 2015

Common source semiconductor memory device

SAMSUNG ELECTRONICS CO LTD1 citations52
US8665644B2Mar 4, 2014

Stacked memory device and method of fabricating same

SAMSUNG ELECTRONICS CO LTD0 citations52
US9053963B2Jun 9, 2015

Multiple well bias memory

SAMSUNG ELECTRONICS CO LTD1 citations50

YU HAK-SOO

6 patents

PARK CHUL-WOO

5 patents

KIM CHAN-KYUNG

3 patents

BAEK IN-GYU

2 patents

KIM SUA

2 patents

SON JONG-PIL

2 patents

SEO EUN SUNG

1 patent

KANG UK-SONG

1 patent

KIM SANG-YUN

1 patent

YU HAK SOO

1 patent

PARK CHUL WOO

1 patent