Inventor
HWANG HONG-SUN
KR48 patents
⚠️ This page may combine multiple inventors who share the name “HWANG HONG-SUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
23 patentsUS5867442AFeb 2, 1999
Variable output voltage booster circuits and methods
SAMSUNG ELECTRONICS CO LTD47 citations93
US5808955ASep 15, 1998
Integrated circuit memory devices including sub-word line drivers and related methods
SAMSUNG ELECTRONICS CO LTD26 citations93
US5757714AMay 26, 1998
Semiconductor memory device with on-chip boosted power supply voltage generator
SAMSUNG ELECTRONICS CO LTD36 citations93
US5130580AJul 14, 1992
Sense amplifier driving circuit employing current mirror for semiconductor memory device
SAMSUNG ELECTRONICS CO LTD34 citations92
US6362995B1Mar 26, 2002
Arrangements of interface logic, memory core, data shift and pad blocks for integrated circuit memory devices
SAMSUNG ELECTRONICS CO LTD30 citations86
US9653141B2May 16, 2017
Method of operating a volatile memory device and a memory controller
SAMSUNG ELECTRONICS CO LTD10 citations84
US9335951B2May 10, 2016
Memory device for reducing a write fail, a system including the same, and a method thereof
SAMSUNG ELECTRONICS CO LTD9 citations84
US8917564B2Dec 23, 2014
Three-dimensional semiconductor memory device having compensating data skewing according to interlayer timing delay and method of de-skewing data therein
SAMSUNG ELECTRONICS CO LTD5 citations84
US8730710B2May 20, 2014
Semiconductor memory device having stacked structure including resistor-switched based logic circuit and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD8 citations84
US8355291B2Jan 15, 2013
Resistive memory device and method of controlling refresh operation of resistive memory device
SAMSUNG ELECTRONICS CO LTD15 citations84
US7224596B2May 29, 2007
Apparatus and method for repairing semiconductor memory device
SAMSUNG ELECTRONICS CO LTD12 citations79
US7382668B2Jun 3, 2008
Full-stress testable memory device having an open bit line architecture and method of testing the same
SAMSUNG ELECTRONICS CO LTD7 citations74
US6154404ANov 28, 2000
Integrated circuit memory devices having sense amplifier driver circuits therein that improve writing efficiency
SAMSUNG ELECTRONICS CO LTD14 citations74
US4948993AAug 14, 1990
Distributed sensing control circuit for a sense amplifier of the memory device
SAMSUNG ELECTRONICS CO LTD18 citations74
US9042194B2May 26, 2015
Refresh method, refresh address generator, volatile memory device including the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US8935467B2Jan 13, 2015
Memory system, and a method of controlling an operation thereof
SAMSUNG ELECTRONICS CO LTD3 citations63
US7586804B2Sep 8, 2009
Memory core, memory device including a memory core, and method thereof testing a memory core
SAMSUNG ELECTRONICS CO LTD6 citations63
US6194931B1Feb 27, 2001
Circuit for generating backbias voltage corresponding to frequency and method thereof for use in semiconductor memory device
SAMSUNG ELECTRONICS CO LTD6 citations63
US5796668AAug 18, 1998
Integrated circuit memory devices having reduced write cycle times and related methods
SAMSUNG ELECTRONICS CO LTD3 citations63
US5214600AMay 25, 1993
Semiconductor memory array having interdigitated bit-line structure
SAMSUNG ELECTRONICS CO LTD5 citations61
US9076539B2Jul 7, 2015
Common source semiconductor memory device
SAMSUNG ELECTRONICS CO LTD1 citations52
US8665644B2Mar 4, 2014
Stacked memory device and method of fabricating same
SAMSUNG ELECTRONICS CO LTD0 citations52
US9053963B2Jun 9, 2015
Multiple well bias memory
SAMSUNG ELECTRONICS CO LTD1 citations50
YU HAK-SOO
6 patentsUS8619490B2Dec 31, 2013
Semiconductor memory devices
YU HAK-SOO179 citations98
US8934311B2Jan 13, 2015
Semiconductor memory device capable of screening a weak bit and repairing the same
YU HAK-SOO11 citations84
US8769356B2Jul 1, 2014
Bad page management in memory device or system
YU HAK-SOO8 citations84
US8488399B2Jul 16, 2013
Semiconductor devices having a three-dimensional stacked structure and methods of de-skewing data therein
YU HAK-SOO5 citations84
US8477554B2Jul 2, 2013
Semiconductor memory device
YU HAK-SOO13 citations84
US8830715B2Sep 9, 2014
Semiconductor memory device including vertical channel transistors
YU HAK-SOO1 citations52
PARK CHUL-WOO
5 patentsUS8588017B2Nov 19, 2013
Memory circuits, systems, and modules for performing DRAM refresh operations and methods of operating the same
PARK CHUL-WOO34 citations92
US8873324B2Oct 28, 2014
Method of refreshing a memory device, refresh address generator and memory device
PARK CHUL-WOO9 citations84
US8677216B2Mar 18, 2014
Stacked semiconductor memory device and related error-correction method
PARK CHUL-WOO14 citations84
US8780656B2Jul 15, 2014
Stacked memory device and method of repairing same
PARK CHUL-WOO2 citations63
US8441852B2May 14, 2013
Stacked memory device and method of fabricating same
PARK CHUL-WOO0 citations52
KIM CHAN-KYUNG
3 patentsUS8654595B2Feb 18, 2014
Nonvolatile memory device with a clamping voltage generation circuit for compensating the variations in memory cell parameters
KIM CHAN-KYUNG24 citations92
US9171589B2Oct 27, 2015
Memory device, method of performing read or write operation and memory system including the same
KIM CHAN-KYUNG10 citations84
US9042152B2May 26, 2015
Data read circuit, a non-volatile memory device having the same, and a method of reading data from the non-volatile memory device
KIM CHAN-KYUNG10 citations84
BAEK IN-GYU
2 patentsUS8553445B2Oct 8, 2013
Semiconductor memory device having stacked structure including resistor-switched based logic circuit and method of manufacturing the same
BAEK IN-GYU14 citations84
US8619458B2Dec 31, 2013
Bidirectional resistive memory devices using selective read voltage polarity
BAEK IN-GYU3 citations62