Inventor
MORALES GUARIONEX
US23 patents
⚠️ This page may combine multiple inventors who share the name “MORALES GUARIONEX”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
21 patentsUS6033584AMar 7, 2000
Process for reducing copper oxide during integrated circuit fabrication
ADVANCED MICRO DEVICES INC118 citations98
US6444593B1Sep 3, 2002
Surface treatment of low-K SiOF to prevent metal interaction
ADVANCED MICRO DEVICES INC28 citations92
US6281121B1Aug 28, 2001
Damascene metal interconnects using highly directional deposition of barrier and/or seed layers including (III) filling metal
ADVANCED MICRO DEVICES INC47 citations92
US6235632B1May 22, 2001
Tungsten plug formation
ADVANCED MICRO DEVICES INC23 citations92
US6127193AOct 3, 2000
Test structure used to measure metal bottom coverage in trenches and vias/contacts and method for creating the test structure
ADVANCED MICRO DEVICES INC41 citations92
US6083817AJul 4, 2000
Cobalt silicidation using tungsten nitride capping layer
ADVANCED MICRO DEVICES INC19 citations92
US5994778ANov 30, 1999
Surface treatment of low-k SiOF to prevent metal interaction
ADVANCED MICRO DEVICES INC21 citations92
US6046106AApr 4, 2000
High density plasma oxide gap filled patterned metal layers with improved electromigration resistance
ADVANCED MICRO DEVICES INC18 citations84
US6335273B2Jan 1, 2002
Surface treatment of low-K SiOF to prevent metal interaction
ADVANCED MICRO DEVICES INC10 citations74
US6335533B1Jan 1, 2002
Electron microscopy sample having silicon nitride passivation layer
ADVANCED MICRO DEVICES INC12 citations74
US6281584B1Aug 28, 2001
Integrated circuit with improved adhesion between interfaces of conductive and dielectric surfaces
ADVANCED MICRO DEVICES INC10 citations74
US6211074B1Apr 3, 2001
Methods and arrangements for reducing stress and preventing cracking in a silicide layer
ADVANCED MICRO DEVICES INC9 citations74
US6110829AAug 29, 2000
Ultra-low temperature Al fill for sub-0.25 μm generation of ICs using an Al-Ge-Cu alloy
ADVANCED MICRO DEVICES INC15 citations74
US6030891AFeb 29, 2000
Vacuum baked HSQ gap fill layer for high integrity borderless vias
ADVANCED MICRO DEVICES INC12 citations74
US6265294B1Jul 24, 2001
Integrated circuit having double bottom anti-reflective coating layer
ADVANCED MICRO DEVICES INC8 citations72
US6420104B1Jul 16, 2002
Method of reducing contact size by spacer filling
ADVANCED MICRO DEVICES INC5 citations63
US6380556B1Apr 30, 2002
Test structure used to measure metal bottom coverage in trenches and vias/contacts and method for creating the test structure
ADVANCED MICRO DEVICES INC3 citations63
US6100192AAug 8, 2000
Method of forming high integrity tungsten silicide thin films
ADVANCED MICRO DEVICES INC3 citations63
US6265273B1Jul 24, 2001
Method of forming rectangular shaped spacers
ADVANCED MICRO DEVICES INC2 citations62
US6177345B1Jan 23, 2001
Method of silicide film formation onto a semiconductor substrate
ADVANCED MICRO DEVICES INC4 citations57
US6500757B1Dec 31, 2002
Method and apparatus for controlling grain growth roughening in conductive stacks
ADVANCED MICRO DEVICES INC0 citations52