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Inventor
SESHADRI INDIRA PRIYAVARSHINI
US
2 patents
Patents
2 patents
US11043494B2
Jun 22, 2021
Structure and method for equal substrate to channel height between N and P fin-FETs
IBM
0 citations
60
US10381348B2
Aug 13, 2019
Structure and method for equal substrate to channel height between N and P fin-FETs
IBM
0 citations
50