Inventor
SANSBURY JAMES D
US31 patents
⚠️ This page may combine multiple inventors who share the name “SANSBURY JAMES D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ALTERA CORP
26 patentsUS6005806ADec 21, 1999
Nonvolatile configuration cells and cell arrays
ALTERA CORP139 citations99
US5949710ASep 7, 1999
Programmable interconnect junction
ALTERA CORP191 citations99
US5581501ADec 3, 1996
Nonvolatile SRAM cells and cell arrays
ALTERA CORP186 citations99
US6018476AJan 25, 2000
Nonvolatile configuration cells and cell arrays
ALTERA CORP96 citations98
US5200920AApr 6, 1993
Method for programming programmable elements in programmable devices
ALTERA CORP142 citations97
US6031763AFeb 29, 2000
Evaluation of memory cell characteristics
ALTERA CORP85 citations96
US5812450ASep 22, 1998
Nonvolatile SRAM cells and cell arrays
ALTERA CORP48 citations96
US6243296B1Jun 5, 2001
Compact electrically erasable memory cells and arrays
ALTERA CORP33 citations92
US6122209ASep 19, 2000
Method of margin testing programmable interconnect cell
ALTERA CORP18 citations92
US5905675AMay 18, 1999
Biasing scheme for reducing stress and improving reliability in EEPROM cells
ALTERA CORP26 citations92
US6646919B1Nov 11, 2003
Apparatus and method for margin testing single polysilicon EEPROM cells
ALTERA CORP14 citations83
US6573138B1Jun 3, 2003
Nonvolatile memory cell with low doping region
ALTERA CORP12 citations82
US6532170B1Mar 11, 2003
Nonvolatile configuration cells and cell arrays
ALTERA CORP11 citations82
US6366498B1Apr 2, 2002
Nonvolatile configuration cells and cell arrays
ALTERA CORP11 citations82
US5959891ASep 28, 1999
Evaluation of memory cell characteristics
ALTERA CORP14 citations82
US6828620B2Dec 7, 2004
Nonvolatile memory cell with low doping region
ALTERA CORP4 citations74
US6442073B1Aug 27, 2002
Nonvolatile memory cell with multiple gate oxide thicknesses
ALTERA CORP6 citations74
US6282122B1Aug 28, 2001
Evaluation of memory cell characteristics
ALTERA CORP12 citations74
US6236597B1May 22, 2001
Nonvolatile memory cell with multiple gate oxide thicknesses
ALTERA CORP6 citations74
US6226201B1May 1, 2001
Techniques to configure nonvolatile cells and cell arrays
ALTERA CORP9 citations74
US6078521AJun 20, 2000
Nonvolatile configuration cells and cell arrays
ALTERA CORP14 citations74
US6052309AApr 18, 2000
Nonvolatile configuration cells and cell arrays
ALTERA CORP7 citations74
US6028787AFeb 22, 2000
Nonvolatile static memory circuit
ALTERA CORP12 citations74
US5914904AJun 22, 1999
Compact electrically erasable memory cells and arrays
ALTERA CORP11 citations74
US6268623B1Jul 31, 2001
Apparatus and method for margin testing single polysilicon EEPROM cells
ALTERA CORP9 citations72
US6781883B1Aug 24, 2004
Apparatus and method for margin testing single polysilicon EEPROM cells
ALTERA CORP3 citations61