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Inventor

VAN BUSKIRK MICHAEL

US14 patents
⚠️ This page may combine multiple inventors who share the name “VAN BUSKIRK MICHAEL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ADVANCED MICRO DEVICES INC

11 patents
US6583479B1Jun 24, 2003

Sidewall NROM and method of manufacture thereof for non-volatile memory cells

ADVANCED MICRO DEVICES INC72 citations96
US6275894B1Aug 14, 2001

Bank selector circuit for a simultaneous operation flash memory device with a flexible bank partition architecture

ADVANCED MICRO DEVICES INC68 citations96
US6266281B1Jul 24, 2001

Method of erasing non-volatile memory cells

ADVANCED MICRO DEVICES INC223 citations95
US6172914B1Jan 9, 2001

Concurrent erase verify scheme for flash memory applications

ADVANCED MICRO DEVICES INC30 citations92
US6005803ADec 21, 1999

Memory address decoding circuit for a simultaneous operation flash memory device with a flexible bank partition architecture

ADVANCED MICRO DEVICES INC26 citations92
US5995415ANov 30, 1999

Simultaneous operation flash memory device with a flexible bank partition architecture

ADVANCED MICRO DEVICES INC20 citations92
US5978267ANov 2, 1999

Bit line biasing method to eliminate program disturbance in a non-volatile memory device and memory device employing the same

ADVANCED MICRO DEVICES INC48 citations92
US6501681B1Dec 31, 2002

Using a low drain bias during erase verify to ensure complete removal of residual charge in the nitride in sonos non-volatile memories

ADVANCED MICRO DEVICES INC18 citations84
US6470414B2Oct 22, 2002

Bank selector circuit for a simultaneous operation flash memory device with a flexible bank partition architecture

ADVANCED MICRO DEVICES INC9 citations74
US5949718ASep 7, 1999

Method and system for selected source during read and programming of flash memory

ADVANCED MICRO DEVICES INC13 citations68
US6549466B1Apr 15, 2003

Using a negative gate erase voltage applied in steps of decreasing amounts to reduce erase time for a non-volatile memory cell with an oxide-nitride-oxide (ONO) structure

ADVANCED MICRO DEVICES INC4 citations63

4d s ltd

2 patents

4DS MEMORY LTD

1 patent