Inventor
YANASHIMA KATSUNORI
JP32 patents
⚠️ This page may combine multiple inventors who share the name “YANASHIMA KATSUNORI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SONY CORP
21 patentsUS6921673B2Jul 26, 2005
Nitride semiconductor device and method of manufacturing the same
SONY CORP75 citations98
US5993542ANov 30, 1999
Method for growing nitride III-V compound semiconductor layers and method for fabricating a nitride III-V compound semiconductor substrate
SONY CORP85 citations96
US6939730B2Sep 6, 2005
Nitride semiconductor, semiconductor device, and method of manufacturing the same
SONY CORP16 citations92
US6509579B2Jan 21, 2003
Semiconductor device
SONY CORP45 citations92
US6603147B1Aug 5, 2003
Semiconductor light emitting device
SONY CORP16 citations84
US6104039AAug 15, 2000
P-type nitrogen compound semiconductor and method of manufacturing same
SONY CORP17 citations84
US7754504B2Jul 13, 2010
Light-emitting diode, method for making light-emitting diode, integrated light-emitting diode and method for making integrated light-emitting diode, method for growing a nitride-based III-V group compound semiconductor, light source cell unit, light-emitting diode
SONY CORP14 citations83
US6960262B2Nov 1, 2005
Thin film-forming apparatus
SONY CORP15 citations83
US6836498B2Dec 28, 2004
Semiconductor laser, semiconductor device and nitride series III-V group compound substrate, as well as manufacturing method thereof
SONY CORP14 citations83
US7282379B2Oct 16, 2007
Nitride semiconductor, semiconductor device, and method of manufacturing the same
SONY CORP5 citations74
US6972206B2Dec 6, 2005
Nitride semiconductor, semiconductor device, and method of manufacturing the same
SONY CORP6 citations74
US9911894B2Mar 6, 2018
Nitride-based III-V group compound semiconductor
SONY CORP2 citations72
US6730611B2May 4, 2004
Nitride semiconductor growing process
SONY CORP2 citations63
US11973316B2Apr 30, 2024
Vertical cavity surface emitting laser element and electronic apparatus
SONY CORP0 citations62
US6890785B2May 10, 2005
Nitride semiconductor, semiconductor device, and manufacturing methods for the same
SONY CORP6 citations62
US6471769B2Oct 29, 2002
Method of manufacturing a nitride series III-V group compound semiconductor
SONY CORP6 citations62
US11984533B2May 14, 2024
Light emitting device using a gallium nitride (GaN) based material
SONY CORP0 citations61
US9231375B2Jan 5, 2016
Semiconductor device
SONY CORP1 citations51
US10686291B2Jun 16, 2020
Semiconductor light emitting element and semiconductor light emitting element assembly
SONY CORP0 citations50
US8891568B2Nov 18, 2014
Laser diode device and method of manufacturing laser diode device
SONY CORP0 citations42
US10236663B2Mar 19, 2019
Semiconductor optical device
SONY CORP0 citations40
SUMITOMO ELECTRIC INDUSTRIES
4 patentsUS9425348B2Aug 23, 2016
Group III nitride semiconductor device, and method for fabricating group III nitride semiconductor device
SUMITOMO ELECTRIC INDUSTRIES1 citations51
US8908732B2Dec 9, 2014
Group-III nitride semiconductor laser device
SUMITOMO ELECTRIC INDUSTRIES0 citations42
US8923354B2Dec 30, 2014
Nitride semiconductor laser, epitaxial substrate
SUMITOMO ELECTRIC INDUSTRIES0 citations41
US8731016B2May 20, 2014
Nitride semiconductor light emitting device
SUMITOMO ELECTRIC INDUSTRIES0 citations41
OHMAE AKIRA
3 patentsUS8859401B2Oct 14, 2014
Method for growing a nitride-based III-V group compound semiconductor
OHMAE AKIRA2 citations58
US9034738B2May 19, 2015
Method for growing a nitride-based III-V Group compound semiconductor
OHMAE AKIRA1 citations49
US8435880B2May 7, 2013
Method for manufacturing semiconductor device and semiconductor device
OHMAE AKIRA0 citations49