Inventor · disambiguated record
Yearn-Ik Choi
Also filed as: CHOI YEARN-IK
4 granted patents·167 citations·filing 1996–1996
81Inventor score
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4 records- 0185US5891776AMethods of forming insulated-gate semiconductor devices using self-aligned trench sidewall diffusion techniquesSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Apr 6, 1999·73 cites·36 claims
- 0273US5773852AShorted anode lateral insulated gate bipolar transistorKOREA ELECTRONICS CO LTD·Filed 1996·Granted Jun 30, 1998·45 cites·8 claims
- 0366US5907181ATapered dielectric microelectronic structures and associated methodsSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted May 25, 1999·35 cites·8 claims
- 0451US5796126AHybrid schottky injection field effect transistorSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Aug 18, 1998·14 cites·10 claims
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