Inventor
LIM TIAN-HOE
US11 patents
Patents
11 patentsUS6632478B2Oct 14, 2003
Process for forming a low dielectric constant carbon-containing film
APPLIED MATERIALS INC658 citations99
US6627532B1Sep 30, 2003
Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition
APPLIED MATERIALS INC358 citations99
US6255222B1Jul 3, 2001
Method for removing residue from substrate processing chamber exhaust line for silicon-oxygen-carbon deposition process
APPLIED MATERIALS INC157 citations99
US6465372B1Oct 15, 2002
Surface treatment of C-doped SiO2 film to enhance film stability during O2 ashing
APPLIED MATERIALS INC101 citations98
US6566278B1May 20, 2003
Method for densification of CVD carbon-doped silicon oxide films through UV irradiation
APPLIED MATERIALS INC647 citations97
US6258735B1Jul 10, 2001
Method for using bypass lines to stabilize gas flow and maintain plasma inside a deposition chamber
APPLIED MATERIALS INC84 citations97
US6614181B1Sep 2, 2003
UV radiation source for densification of CVD carbon-doped silicon oxide films
APPLIED MATERIALS INC114 citations96
US6583497B2Jun 24, 2003
Surface treatment of c-doped SiO2 film to enhance film stability during O2 ashing
APPLIED MATERIALS INC46 citations96
US6784119B2Aug 31, 2004
Method of decreasing the K value in SIOC layer deposited by chemical vapor deposition
APPLIED MATERIALS INC36 citations92
US6573196B1Jun 3, 2003
Method of depositing organosilicate layers
APPLIED MATERIALS INC34 citations89
US7074708B2Jul 11, 2006
Method of decreasing the k value in sioc layer deposited by chemical vapor deposition
APPLIED MATERIALS INC8 citations74