Inventor

YAMANAKA TOSHIAKI

JP69 patents

⚠️ This page may combine multiple inventors who share the name “YAMANAKA TOSHIAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YAMANAKA TOSHIAKI

HITACHI LTD

SRAM having load transistor formed above driver transistor

Semiconductor memory device and a method for fabricating the same

Semiconductor integrated circuit device and process for manufacturing the same

Semiconductor integrated circuit device and process for manufacturing the same

Semiconductor integrated circuit device and process for manufacturing the same

Process for fabricating a semiconductor integrated circuit device

Semiconductor integrated circuit device

Semiconductor integrated circuit device

Semiconductor memory device having flip-flop circuits

Semiconductor memory device having memory cells including IG FETs in a symmetrical arrangement

Static random-access memory having multilevel conductive layer

Semiconductor storage device and process for manufacturing the same

Semiconductor device and method for patterning the semiconductor device in which line patterns terminate at different lengths to prevent the occurrence of a short or break

Integrated circuit device having line width determined by side wall spacer provided in openings formed in insulating film for connection conductors

Semiconductor memory device and a method for fabricating the same

Highly stable semiconductor memory with a small memory cell area

Semiconductor memory devices having stacked polycrystalline silicon transistors

Stacked static random access memory cell having capacitor

Semiconductor device and method of manufacturing thereof

Semiconductor device and method of manufacturing thereof

Semiconductor integrated circuit device and process for fabricating the same

Semiconductor integrated circuit device and process for fabricating the same

Semiconductor memory device having static random access memory

Semiconductor memory device having increased capacitance for the storing nodes of the memory cells

Static random access memory having structure of first-, second- and third-level conductive films

Semiconductor integrated circuit device having capacitance element and process of manufacturing the same

Semiconductor integrated circuit device and process of manufacturing the same

Semiconductor integrated circuit device in which kink current disturbances of MOS transistors are suppressed

Semiconductor memory device having self-aligned wiring conductor

Semiconductor memory device having driver and load MISFETs and capacitor elements

Semiconductor integrated circuit device and process for manufacturing the same

Process for fabricating a semiconductor integrated circuit device

Semiconductor integrated circuit device

Semiconductor integrated circuit device and process for fabricating the same

Semiconductor device and method for patterning

Semiconductor device and method for patterning

Semiconductor memory device and method of manufacturing the same

Semiconductor memory device having large storage capacity and minimal step height between memory cell and peripheral circuits

Semiconductor memory device and manufacturing method thereof

Method of manufacturing a semiconductor integrated circuit device

RENESAS TECH CORP

Semiconductor integrated circuit device and process for manufacturing the same

Semiconductor integrated circuit device and process for manufacturing the same

Semiconductor integrated circuit device and process for manufacturing the same

Semiconductor integrated circuit device and process for manufacturing the same

Semiconductor integrated circuit device and process for manufacturing the same

BRIDGESTONE SPORTS CO LTD

Multi-piece golf ball

IKEDA SHUJI

SRAM with dual word lines overlapping drive transistor gates

BRIDGESOTNE SPORTS CO LTD

Multi-piece golf ball

HITICHI LTD

Method of forming a pattern

RENESAS ELECTRONICS CORP

Semiconductor integrated circuit device and process for manufacturing the same