Inventor
PFORR RAINER
DE21 patents
⚠️ This page may combine multiple inventors who share the name “PFORR RAINER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
11 patentsUS6660437B2Dec 9, 2003
Alternating phase mask
INFINEON TECHNOLOGIES AG22 citations90
US6627392B2Sep 30, 2003
Method of transferring a pattern of high structure density by multiple exposure of less dense partial patterns
INFINEON TECHNOLOGIES AG14 citations81
US7339652B2Mar 4, 2008
Apparatus for projecting a pattern into an image plane
INFINEON TECHNOLOGIES AG9 citations80
US7425396B2Sep 16, 2008
Method for reducing an overlay error and measurement mark for carrying out the same
INFINEON TECHNOLOGIES AG19 citations79
US6692875B2Feb 17, 2004
Mask for optical projection systems, and a process for its production
INFINEON TECHNOLOGIES AG7 citations72
US7393613B2Jul 1, 2008
Set of at least two masks for the projection of structure patterns
INFINEON TECHNOLOGIES AG7 citations70
US6838216B2Jan 4, 2005
Photolithographic mask and methods for producing a structure and of exposing a wafer in a projection apparatus
INFINEON TECHNOLOGIES AG9 citations70
US6635388B1Oct 21, 2003
Contact hole fabrication with the aid of mutually crossing sudden phase shift edges of a single phase shift mask
INFINEON TECHNOLOGIES AG4 citations61
US7393614B2Jul 1, 2008
Set of masks including a first mask and a second trimming mask with a semitransparent region having a transparency between 20% and 80% to control diffraction effects and obtain maximum depth of focus for the projection of structure patterns onto a semiconductor wafer
INFINEON TECHNOLOGIES AG3 citations60
US7588867B2Sep 15, 2009
Reflection mask, use of the reflection mask and method for fabricating the reflection mask
INFINEON TECHNOLOGIES AG1 citations49
US7354683B2Apr 8, 2008
Lithography mask for imaging of convex structures
INFINEON TECHNOLOGIES AG0 citations48
PFORR RAINER
3 patentsUS10157804B2Dec 18, 2018
Method and apparatus for determining a critical dimension variation of a photolithographic mask
PFORR RAINER2 citations71
US8539394B2Sep 17, 2013
Method and apparatus for minimizing overlay errors in lithography
PFORR RAINER4 citations60
US8871409B2Oct 28, 2014
Lithographic targets for uniformity control
PFORR RAINER3 citations59
QIMONDA AG
3 patentsUS7644389B2Jan 5, 2010
Method for producing a mask for the lithographic projection of a pattern onto a substrate
QIMONDA AG7 citations69
US7489386B2Feb 10, 2009
System and method for projecting a pattern from a mask onto a substrate
QIMONDA AG4 citations62
US7855776B2Dec 21, 2010
Methods of compensating lens heating, lithographic projection system and photo mask
QIMONDA AG2 citations58